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Algan/gan insulated gate high electron mobility transistor fabrication method

A technology of high electron mobility and manufacturing method, which is applied in the field of semiconductor devices, high-speed devices and high-frequency devices, short-channel AlGaN/GaN insulated gate high electron mobility transistors, and can solve the problem of adding additional processes, device characteristic degradation, and device Low yield rate and other issues, to achieve the effect of improving reliability and stability, high device yield, and frequency characteristics

Active Publication Date: 2011-12-07
XIAN CETC XIDIAN UNIV RADAR TECH COLLABORATIVE INNOVATION INST CO LTD
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In summary, the current existing technology cannot effectively reduce the source-drain distance and improve the frequency characteristics of the device. In addition, it also has the following problems: first, it complicates the device manufacturing steps and adds many additional processes. , the precision in the process cannot be effectively controlled, and the yield of the device is low. Finally, the radiation resistance of the metal gate electrode is poor, which easily leads to the degradation of the device characteristics

Method used

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  • Algan/gan insulated gate high electron mobility transistor fabrication method
  • Algan/gan insulated gate high electron mobility transistor fabrication method
  • Algan/gan insulated gate high electron mobility transistor fabrication method

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Embodiment 1

[0030] Embodiment 1, the making of device of the present invention, comprises the following steps:

[0031] Step 1. Epitaxial material growth.

[0032] refer to figure 1 and figure 2 , the specific implementation of this step is as follows:

[0033] (101) On the sapphire substrate substrate, utilize the MOCVD process to grow a GaN buffer layer;

[0034] (102) growing an intrinsic GaN layer on the GaN buffer layer;

[0035] (103) On the intrinsic GaN layer, a 24nm thick Al 0.3 Ga 0.7 N layer;

[0036] (104) in Al 0.3 Ga 0.7 On the N layer, a 2nm thick GaN capping layer is grown.

[0037] Step 2. Make the gate electrode.

[0038] refer to figure 1 and image 3 , the specific implementation of this step is as follows:

[0039] (201) Deposit Al on the surface of the sample by atomic layer deposition (ALD) 2 o 3 The dielectric layer is deposited with a thickness of 5nm and a temperature of 300°C.

[0040] Firstly, boil and wash the sample in stripping solution for 20...

Embodiment 2

[0054] Embodiment 2, the making of device of the present invention, comprises the following steps:

[0055] Step 1. Epitaxial material growth.

[0056] refer to figure 1 and figure 2 , the specific implementation of this step is as follows:

[0057] (101) On the sapphire substrate substrate, utilize the MOCVD process to grow a GaN buffer layer;

[0058] (102) growing an intrinsic GaN layer on the GaN buffer layer;

[0059] (103) On the intrinsic GaN layer, a 24nm thick Al 0.3 Ga 0.7 N layer;

[0060] (104) in Al 0.3 Ga 0.7 On the N layer, a 2nm thick GaN capping layer is grown.

[0061] Step 2. Make the gate electrode.

[0062] refer to figure 1 and image 3 , the specific implementation of this step is as follows:

[0063] (201) Deposit Al on the surface of the sample by atomic layer deposition (ALD) 2 o 3 The dielectric layer is deposited with a thickness of 7nm and a temperature of 300°C.

[0064] Firstly, boil and wash the sample in stripping solution for ...

Embodiment 3

[0078] Embodiment 3, the making of device of the present invention, comprises the following steps:

[0079] Step 1. Epitaxial material growth.

[0080] refer to figure 1 and figure 2 , the specific implementation of this step is as follows:

[0081] (101) On the sapphire substrate substrate, utilize the MOCVD process to grow a GaN buffer layer;

[0082] (102) growing an intrinsic GaN layer on the GaN buffer layer;

[0083] (103) On the intrinsic GaN layer, a 24nm thick Al 0.3 Ga 0.7 N layer;

[0084] (104) in Al 0.3 Ga 0.7 On the N layer, a 2nm thick GaN capping layer is grown.

[0085] Step 2. Make the gate electrode.

[0086] refer to figure 1 and image 3 , the specific implementation of this step is as follows:

[0087] (201) Deposit Al on the surface of the sample by atomic layer deposition (ALD) 2 o 3 The dielectric layer is deposited with a thickness of 10nm and a temperature of 300°C.

[0088] Firstly, boil and wash the sample in stripping solution for 2...

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Abstract

The invention discloses an AlGaN / GaN insulating gate high electron mobility transistor device and a manufacturing method thereof, which relates to the technical field of microelectronics and mainly solves the problems of low device frequency and poor radiation resistance performance. The device includes a GaN buffer layer, an intrinsic GaN layer, an Al0.3Ga0.7N layer, a GaN capping layer, a gate oxide layer and gate, source and drain electrodes, wherein the gate oxide layer is made of Al2O3, and the gate electrode is made of transparent ZnO. The ZnO gate electrode is doped with Al element, and its length is equal to the distance between source and drain. The manufacturing process of the device of the present invention is as follows: first grow epitaxial material, then make Al2O3 gate oxide layer and ZnO gate electrode, and finally make source and drain electrodes on both sides of ZnO gate electrode by self-alignment method. The invention has the advantages of good frequency characteristics, good anti-radiation characteristics, simple process, good repeatability and high reliability, and can be used as electronic components in high-frequency and high-speed circuits.

Description

technical field [0001] The invention belongs to the technical field of microelectronics and relates to semiconductor devices, specifically a structure and a realization method of a short-channel AlGaN / GaN insulating gate high electron mobility transistor using transparent material ZnO as a gate and source-drain self-alignment technology , used as high-speed devices and high-frequency devices. Background technique [0002] Compared with the parameters of other semiconductor materials, GaN material has obvious advantages. Its forbidden band width is the widest, its saturation electron velocity is also better than other semiconductor materials, and it has a large breakdown field strength and high thermal conductivity. The characteristics of charge carrier velocity field are the basis of device operation. High saturation velocity leads to large current and high frequency. High breakdown field strength is crucial for high-power applications of devices. At the same time, due to th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/778H01L29/43H01L29/08H01L21/335H01L21/285
Inventor 马晓华郝跃曹艳荣王冲高海霞杨凌
Owner XIAN CETC XIDIAN UNIV RADAR TECH COLLABORATIVE INNOVATION INST CO LTD
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