Silicon carbide MOSFET device and manufacturing method thereof

Abstract

The invention provides a silicon carbide MOSFET device and a manufacturing method thereof. The method comprises the following steps: providing a substrate with a first doping type; forming a patternedfirst barrier layer on the upper surface of the substrate; taking the first barrier layer adopted as a mask, and forming a base region extending from the upper surface of the substrate to the interior of the substrate through adopting a first ion implantation process in an inclined implantation manner, wherein the base region has a second doping type; forming a source region of a first doping type in the substrate; forming a contact region of a second doping type in the substrate, and forming a gate structure, wherein the base region extends to a part below the first barrier layer by adjusting an implantation angle of the first ion implantation process, and the implantation angle of the first ion implantation process is an included angle between the implantation direction of the first ionimplantation process and the upper surface of the substrate. According to the method provided by the invention, the process can be simplified, a short channel can be realized, and the on resistance of the device is reduced.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, and more particularly, to a silicon carbide MOSFET device and a method for manufacturing the silicon carbide MOSFET device. Background technique [0002] In the field of SiC MOSFET, in order to reduce the cell size and increase the current density, the length of the channel should be set as short as possible. Considering the influence of lithography precision, the channel with a length less than 0.5um generally uses a self-alignment process accomplish. Due to the low diffusion coefficient of SiC, it is impossible to use the Si standard self-alignment process to form a channel. The existing SiC MOSFET channel self-alignment process first uses polysilicon after photolithography as the barrier layer of the P-type base region to form a P-type base region. After forming the base region, the polysilicon is oxidized, and the polysilicon will form a certain thickness of silicon dioxide on...

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Problems solved by technology

In addition, when forming the P+ contact region, because the ion implantation dose of the N+ source region is much larger than the P+ contact region, a separate mask is required to form the barrier layer of the P+ contact region, which increases the manufacturing cost.

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