CMOS integrated circuit resisting total dose radiation

Abstract

The invention discloses a CMOS integrated circuit resisting total dose radiation, belonging to the technical field of electronics. The CMOS integrated circuit resisting total dose radiation comprises an NMOS element and a PMOS element which are insulated by a groove. The CMOS integrated circuit resisting total dose radiation is characterized in that the groove is filled with a mixture of a first insulation material and a second insulation material, wherein the first insulation material generates fixed positive charges under the total dose radiation, the second insulation material generates fixed negative charges under the total dose radiation, and the mixture is in weak charges or electric neutrality. The invention can be applied to spaceflight, military, nuclear power, high energy physics and the other industries relevant to total dose radiation.

Description

technical field [0001] The invention relates to a CMOS integrated circuit, in particular to a novel CMOS integrated circuit capable of resisting total dose radiation, which belongs to the field of electronic technology. Background technique [0002] Integrated circuit technology is being more and more widely used in industries related to total dose radiation, such as aerospace, military, nuclear power and high-energy physics. Moreover, with the continuous improvement of the integration level of integrated circuits, the size of semiconductor devices is decreasing day by day. Shallow trench isolation technology is becoming the mainstream technology for electrical isolation between devices in integrated circuits due to its excellent device isolation performance. However, due to the damage of the silicon dioxide oxide layer in the device by the total dose of irradiated particles, a large amount of fixed positive charges will be generated in the oxide layer of the shallow trench ...

AI Technical Summary

Problems solved by technology

Before the device supervisor is turned on, the supervisor is in the off state, but at this time the parasitic tube has been turned on, resulting in a large off-state leakage current

This off-state leakage current will greatly increase the power consumption of the integrated circuit, and have a relatively large negative impact on the reliability of the integrated circuit, which has become a total dose radiation reliability problem that needs to be solved urgently at this stage.

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