Method for manufacturing large-diameter silicon wafer

Abstract

The invention discloses a method for manufacturing a large-diameter silicon wafer, which comprises the following steps: (1) rinsing a ground silicon wafer with HF solution to remove an oxide layer onthe surface of the ground silicon wafer and improve the removal speed of double-side polishing; (2) performing conventional double-side polishing on the ground silicon wafer; and (3) performing single-side finishing polish and washing on the silicon wafer. The process method removes the oxide layer on the ground surface with the HF solution, better contributes to the double-side polishing, therebyreducing the polishing time greatly, reducing the removal amount of a silicon single crystal and improving the unit yield of the single crystal at the same time. Because of the reduction of a grinding amount and a corrosion amount, the method ensures machining accuracy of products powerfully, and can manufacture the large-diameter silicon wafer with high flatness. The method for manufacturing thelarge-diameter silicon wafer can be used for any technique for processing the large-diameter silicon wafer in commerce.

Description

technical field [0001] The present invention uses the improved large-diameter silicon wafer manufacturing process to process silicon polished wafers, specifically a method of rinsing silicon wafers with HF solution after double-sided grinding to remove the surface oxide layer, and then directly using conventional double-sided Polishing process for polishing. The silicon wafers processed by this processing technology can effectively reduce the processing time, and at the same time can improve the processing accuracy of the silicon wafers and the output rate of silicon single crystals. Background technique [0002] Semiconductor silicon wafer is the main substrate material of modern ultra-large-scale integrated circuits. Generally, it is an integrated circuit-level wafer manufactured through processes such as crystal pulling, slicing, chamfering, grinding (including grinding and grinding), corrosion, polishing, and cleaning. Semiconductor wafers. [0003] The ability of the ...

AI Technical Summary

Problems solved by technology

However, during the grinding process of the silicon wafer, due to the rigid removal of the diamond grit and the surface of the silicon wafer, an oxide layer will be generated locally at high temperature, and the existence of the surface oxide layer will affect the processing speed of the next step.

Images