Welding method of target materials and back plates

A welding method and backplane technology, which are used in welding equipment, non-electric welding equipment, metal material coating processes, etc., can solve the problems of easy oxidation and affect the welding effect of target components, and achieve high bonding tightness and small bending deformation. , the effect of increasing the degree of mutual diffusion

Active Publication Date: 2012-06-27
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The problem to be solved by the present invention is to provide a welding method of the target and the back plate, which solves the problem that in the diffusion welding process, the contact surface of the copper target and the back plate is easily oxidized in a heated state, which affects the welding effect of the obtained target assembly

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  • Welding method of target materials and back plates
  • Welding method of target materials and back plates
  • Welding method of target materials and back plates

Examples

Experimental program
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Effect test

Embodiment 1

[0032] The process steps and welding results of diffusion welding between 99.9999% high-purity Cu target and 6061Al alloy backplane are as follows:

[0033] (1) Surface processing of the target and the back plate: machine the surface of the Cu target and the surface of the 6061Al alloy back plate to make them bright, especially to make the surface finish of the two contact surfaces reach 0.2um to 1.6um.

[0034] (2) Chemical cleaning of the target material and the back plate: the Cu target is first cleaned with an acid solution, and then cleaned with an organic solvent; and the 6061Al alloy back plate is directly cleaned with an organic solvent. The acid solution used for cleaning can be hydrofluoric acid (HF) and nitric acid (HNO 3 ), the mixed solvent of hydrofluoric acid (HF) and nitric acid (HNO 3 ) in the mixed solvent, the proportion of hydrofluoric acid is 3% to 15%, and the proportion of nitric acid can be 85% to 97%; as preferred, HF:HNO 3 The proportioning ratio is...

Embodiment 2

[0043] The following is another process step and welding result of diffusion welding between the 99.9999% high-purity Cu target and the ZL105 aluminum alloy backplane: (1) Surface processing of the target and backplane: the surface of the Cu target and the surface of the ZL105 aluminum alloy backplane Carry out mechanical processing to make it bright, especially to make the smoothness of the contact surface between the two reach 1.6um to 3.2um.

[0044] (2) Chemical cleaning of the target material and the back plate: the Cu target is first cleaned with an acid solution, and then cleaned with an organic solvent; and the ZL105 aluminum alloy back plate is directly cleaned with an organic solvent. The acid solution used for cleaning can be hydrofluoric acid (HF) and nitric acid (HNO 3 ), the mixed solvent of hydrofluoric acid (HF) and nitric acid (HNO 3 ) in the mixed solvent, the proportion of hydrofluoric acid is 3% to 15%, and the proportion of nitric acid can be 85% to 97%; ...

Embodiment 3

[0053] The following are the process steps and results of diffusion welding of 99.9999% high-purity Cu target and oxygen-free copper backplane:

[0054] (1) Surface processing of the target material and the back plate: machine the surface of the Cu target and the surface of the oxygen-free copper back plate to make them bright, especially to make the surface finish of the two contact surfaces reach 0.2um to 3.2um.

[0055] (2) Chemical cleaning of the target material and the backplane: the Cu target is first cleaned with an acid solution, and then cleaned with an organic solvent; and the oxygen-free copper backplane is directly cleaned with an organic solvent. The acid solution used for cleaning can be hydrofluoric acid (HF) and nitric acid (HNO 3 ), the mixed solvent of hydrofluoric acid (HF) and nitric acid (HNO 3 ) in the mixed solvent, the proportion of hydrofluoric acid is 3% to 15%, and the proportion of nitric acid can be 85% to 97%; as preferred, HF:HNO 3 The proport...

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Abstract

The invention relates to a welding method of target materials and back plates, which comprises the following steps: providing a copper target material and a back plate; machining and chemically cleaning the surfaces of the copper target material and the back plate; carrying out welding operation by adopting thermal compression processing under a vacuum environment, and welding the copper target material to the back plate to form a target material assembly; and carrying out thermal diffusion processing for the target material assembly under the environment of vacuum and normal atmosphere, and then air cooling. The invention adopts a vacuum collar for realizing the thermal compression welding of the target material and the back plate under the vacuum environment, thereby effectively avoiding the oxidation of a metallic welding surface, reducing the cost of vacuum equipment, providing larger positive pressure and further promoting the improvement of the bonding strength between the copper target material and the back plate.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a welding method of a target material and a back plate. Background technique [0002] In the semiconductor industry, a target assembly is composed of a target that meets the sputtering performance and a back plate that is combined with the target and has a certain strength. The back plate can play a supporting role when the target assembly is assembled to the sputtering base, and has the effect of conducting heat. At present, metal copper (Cu) is mainly used as a target material to be coated by physical vapor deposition (PVD) and a barrier layer is formed, and magnetron sputtering is used in the sputtering process; High copper or aluminum material is used as the backplane material. [0003] The high-purity copper target and the back plate of copper or aluminum alloy are processed and welded to form target components used in the semiconductor industry, and then install...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B23K20/14B23K20/24B23K20/02C23C14/34C23G1/10C23G5/02
Inventor 姚力军潘杰王学泽陈勇军周友平刘庆
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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