Plasma reaction chamber pretreatment method

A reaction chamber and plasma technology, which is used in semiconductor/solid-state device manufacturing, gaseous chemical plating, coating, etc., and can solve problems such as high cost and investment

Inactive Publication Date: 2011-03-23
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] However, when using the above-mentioned devices and methods to reduce the occurrence of arc discharge, it is necessary to improve existing equipment or introduce new equipment, and the cost investment is huge.

Method used

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Embodiment Construction

[0022] Although the present invention will be described in more detail below with reference to the accompanying drawings, in which preferred embodiments of the invention are shown, it should be understood that those skilled in the art can modify the invention described herein and still achieve the advantageous effects of the invention. Therefore, the following description should be construed as a broad teaching for those skilled in the art, rather than as a limitation of the present invention.

[0023] In the interest of clarity, not all features of an actual embodiment are described. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention with unnecessary detail. It should be recognized that in the development of any actual embodiment, a number of implementation details must be made to achieve the developer's specific goals, such as changing from one embodiment to another in accordance with system-...

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Abstract

The invention discloses a plasma reaction chamber pretreatment method. Before executing a processing operation for a substrate introduced into a reaction chamber by using the reaction chamber, the method also comprises the following steps: placing a slide glass of which the surface is provided with an organic membrane layer into the reaction chamber; introducing ionized fluorocarbon gas into the reaction chamber, wherein the ratio of fluorine to carbon in the fluorocarbon gas is less than or equal to 2 to 1; and shifting the slide glass out of the reaction chamber. The method can reduce the generation of arc discharge phenomenon.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a pretreatment method for a plasma reaction chamber. Background technique [0002] Plasma is a neutral, high-energy, and ionized gas that can be ionized by bombarding gas atoms with strong DC or AC electromagnetic fields or with some electron source in a limited process chamber. Currently, in the semiconductor manufacturing process, plasma is widely used in various steps of integrated circuit manufacturing because it can provide most of the energy required for the gas reaction that occurs on the surface of the silicon wafer. For example, in High Density Plasma Chemical Vapor Deposition (HDPCVD), a plasma is ionized in a thermal energy field and a gas source is excited to deposit thin films; in addition, another application of plasma is selective etching by plasma to remove part of the metal or thin film material. [0003] However, in actual production, such ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/44H01L21/00H01J37/00
Inventor 王新鹏孙武尹晓明张海洋
Owner SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP
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