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Polysilicon nanometer film pressure sensor with temperature sensor and manufacture method thereof

A pressure sensor and temperature sensor technology, applied in nanostructure manufacturing, fluid pressure measurement by changing ohmic resistance, thermometers, etc., can solve the problem that high sensitivity and low temperature coefficient cannot be obtained at the same time, and high sensitivity and low temperature coefficient cannot be obtained at the same time etc. to achieve high sensitivity, lower cost, and smaller chip area

Inactive Publication Date: 2010-02-03
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Through research, it is found that one of the shortcomings of ordinary polysilicon pressure sensors in practical applications is that they cannot obtain high sensitivity and low temperature coefficient at the same time, which is related to the piezoresistive properties of ordinary polysilicon thin films.
The sensitivity of polysilicon pressure sensor is proportional to the gauge coefficient of polysilicon, while the gauge coefficient and temperature coefficient of ordinary polysilicon decrease with the increase of doping concentration, so high sensitivity and low temperature coefficient cannot be obtained at the same time

Method used

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  • Polysilicon nanometer film pressure sensor with temperature sensor and manufacture method thereof

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Embodiment 1

[0012] Example 1: Combining figure 1 , the present invention is a polysilicon nano-membrane pressure sensor with a temperature sensor, which is composed of a monocrystalline silicon silicon cup (1), an insulating layer (2), a polysilicon nano-membrane piezoresistor (3) and a thin film resistor (4) , the monocrystalline silicon silicon cup (1) is connected with the insulating layer (2), and the insulating layer (2) is connected with the polycrystalline silicon nano-film piezoresistor (3) and the thin film resistor (4).

[0013] The monocrystalline silicon silicon cup (1) includes a pressure-sensitive film (5) and a peripheral fixed support structure (6), the pressure-sensitive film (5) is located on the upper part of the monocrystalline silicon silicon cup (1), and the peripheral fixed support structure (6) ) are located on both sides of the monocrystalline silicon silicon cup (1).

[0014] The manufacturing method of the polysilicon nano-membrane pressure sensor with temperat...

Embodiment 2

[0015] Example 2: Combining figure 1 , the working principle of the present invention mainly contains the following two aspects:

[0016] 1. Connect polysilicon nanofilm varistors into a Wheatstone bridge. Changes in external pressure will lead to changes in the resistance of the varistors, which will lead to changes in the output signal of the bridge. The pressure can be measured by measuring the output signal of the bridge. Measurement;

[0017] 2. The resistance value of the thin film resistor changes with the temperature, and the temperature measurement is realized by measuring the resistance value of the thin film resistor.

Embodiment 3

[0018] Embodiment 3: the polysilicon nano-membrane pressure sensor manufacturing method with temperature sensor of the present invention, described thin-film resistance is as the temperature measurement unit of sensor, is example with aluminum thin-film resistance, and its process step is as follows:

[0019] 1. Select a 4-inch 400μm thick N-type (100) double-sided polished single crystal silicon wafer with a resistivity of 2-4Ωcm;

[0020] 2. After the silicon wafer is cleaned, the silicon dioxide insulating layer is grown by high temperature thermal oxidation;

[0021] 3. Use LPCVD technology to deposit polysilicon nano-film on the front side of the silicon wafer, the deposition temperature is 620°C, and the thickness is 80-90nm;

[0022] 4. Use ion implantation technology to do boron doping on the polysilicon nanofilm, and then anneal for 30 minutes in a nitrogen atmosphere at 1100°C;

[0023] 5. Photolithographic polysilicon nano-film varistor;

[0024] 6. Use a vacuum c...

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Abstract

The invention provides a polysilicon nanometer film pressure sensor with a temperature sensor and a manufacture method thereof, wherein the pressure sensor guarantees high sensitivity, obtains low-temperature coefficient, and realizes pressure and temperature measurement. The pressure sensor consists of a monocrystal silicon cup, an insulating layer, a polysilicon nanometer film pressure sensitiveresistor and a film resistor. The monocrystal silicon cup is connected with the insulating layer, and the insulating layer is connected with the polysilicon nanometer film pressure sensitive resistorand the film resistor. The monocrystal silicon cup comprises a pressure film and a peripheral fixed structure, the pressure film is positioned above the monocrystal silicon cup, and the peripheral fixed structure is positioned at the two edges of the monocrystal silicon cup. The monocrystal silicon cup is manufactured by corroding the single crystal silicon, one layer of silicon dioxide or silicon nitride is deposited above the monocrystal silicon cup to be as the insulating layer by means of chemical vapor deposition, and a pressure measuring unit and a temperature measuring unit are intergraded on a chip, so as to be capable of measuring the pressure and the temperature, reduce the area of the chip, and reduce the cost.

Description

(1) Technical field [0001] The invention relates to electrical measurement technology, specifically a polysilicon nano-membrane pressure sensor with a temperature sensor and a manufacturing method thereof. (2) Background technology [0002] The polysilicon pressure sensor was produced in the 1970s. Since the varistor and the silicon substrate are isolated by an insulating layer, the PN junction isolation of the diffused silicon pressure sensor was canceled, so the operating temperature of the sensor was significantly increased. In the existing polysilicon pressure sensor, the piezoresistor is composed of a polysilicon film (ordinary polysilicon film) with a thickness of several hundred nanometers to several microns, so it is also called an ordinary polysilicon pressure sensor. Ordinary polysilicon pressure sensors developed rapidly in the 1980s because of their simple manufacturing process, low cost, and ability to work in high-temperature environments. Through research, it...

Claims

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Application Information

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IPC IPC(8): G01L1/18G01L9/06G01K7/16B82B1/00B82B3/00
Inventor 刘晓为王喜莲揣荣岩陆学斌施长治
Owner HARBIN INST OF TECH
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