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Resistive random access memory based on bismuth iron thin film system and manufacturing method thereof

A resistive random, bismuth ferrite technology, applied in the direction of static memory, digital memory information, information storage, etc., can solve the problems of poor endurance, high operating voltage, slow speed, etc., and achieve stable resistance value and good electrical resistance effect , good stability effect

Active Publication Date: 2012-06-13
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the mainstream non-volatile memory is flash memory (Flash Memory), but flash memory has problems such as high operating voltage, slow speed, and poor endurance. With the continuous improvement of information storage technology requirements, it is necessary to develop low-power, High-speed, long-retention non-volatile memory

Method used

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  • Resistive random access memory based on bismuth iron thin film system and manufacturing method thereof
  • Resistive random access memory based on bismuth iron thin film system and manufacturing method thereof
  • Resistive random access memory based on bismuth iron thin film system and manufacturing method thereof

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Experimental program
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Effect test

Embodiment 1

[0039] Such as figure 1 In (c), the silicon dioxide dielectric isolation layer 107 with a thickness of about 400nm is oxidized on the single crystal silicon base layer 106 by thermal oxidation, and the silicon dioxide dielectric isolation layer 107 is oxidized by thermal evaporation or magnetron sputtering 2 Growth Pt / Ti (the thickness of Pt is respectively 100nm, the thickness of Ti is 50nm, used as bonding layer) lower electrode 102 on dielectric isolation layer 107; Then grow bismuth ferrite thin film on lower electrode 102; Finally by electron beam evaporation, A 200 nm thick Cu upper electrode 104 is prepared by using a mask (the mask is uniformly distributed 100 μm circular holes), and the size of the electrode is 100 μm.

[0040] Among them, the bismuth ferrite thin film is prepared by the sol-gel method, and the specific process is as follows:

[0041] (1) Weigh iron nitrate (Fe(NO 3 ) 3 9H 2 O) and bismuth nitrate (Bi(NO 3 ) 3 ·5H 2 O), dissolved in ethylene g...

Embodiment 2

[0047] The main difference between embodiment 2 and embodiment 1 is: the recording medium used in embodiment 2 is lanthanum (La) doped BiFeO 3 Thin films in which the molar ratio of lanthanum is 5%, i.e. La 0.05 Bi 0.95 FeO 3 , the annealing temperature is 550°C.

[0048] Oxidize about 400nm thick silicon dioxide dielectric isolation layer 107 on the monocrystalline silicon base layer 106 by thermal oxidation, and grow Pt / Ti (Pt) on the silicon dioxide dielectric isolation layer 107 by thermal evaporation or magnetron sputtering Thickness is 100nm, the thickness of Ti is 50nm, as bonding layer) lower electrode 102, then grow the bismuth ferrite thin film doped with lanthanum on the lower electrode 102, finally by electron beam evaporation, adopt the method of mask plate to prepare 200nm thick The Cu upper electrode 104 has a size of 100 μm.

[0049] Wherein, the above-mentioned bismuth ferrite film is prepared by a sol-gel method, and the specific process is as follows:

...

Embodiment 3

[0054] The main difference between embodiment 3 and embodiment 2 is: the upper electrode of embodiment 3 adopts Ag electrode.

[0055] Oxidize SiO with a thickness of about 400 nm on the single crystal silicon base layer 106 by thermal oxidation 2 The dielectric isolation layer 107 is formed on SiO by thermal evaporation or magnetron sputtering 2 A lower electrode 102 of Pt / Ti (with a thickness of 100 nm / 50 nm) is grown on the dielectric isolation layer 107 .

[0056] The above-mentioned bismuth ferrite thin film is prepared by a sol-gel method.

[0057] The specific process is:

[0058] (1) Weigh iron nitrate (Fe(NO 3 ) 3 9H 2 O), bismuth nitrate (Bi(NO 3 ) 3 ·5H 2 O) and La(NO 3 ) 3 ·6H 2 O dissolved in ethylene glycol methyl ether (C 3 h 8 o 2 ) and ethylene glycol (C 2 h 6 o 2 ) in the mixed solution, and add an appropriate amount of acetic acid (C 2 h 4 o 2 ), adjust the pH value at about 2-3, so that the concentration of the bismuth ferrite sol obtain...

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Abstract

The invention relates to a resistive random access memory based on bismuth iron thin film system and manufacturing method thereof. The memory comprises an insulating substrate (101) layer as the firstlayer, a lower electrode (102) as the second layer, a bismuth iron thin film (103) as the third layer, an upper electrode (104) as the fourth layer; the manufacturing method utilizes the method thermal evaporation or magnetron sputtering to grow the lower electrode on the insulating substrate layer, utilizes the method of magnetron sputtering, pulsed laser deposition or colloidal sol-gel to growthe bismuth iron thin film on the lower electrode, finally utilizes the method of thermal evaporation or magnetron sputtering to grow the upper electrode on the bismuth iron thin film, and utilizes the method of ultraviolet lithography, electron beam or ion beam etching to obtain the electrode pattern. The memory provided by the invention has excellent electroluminescent resistance effect and goodstability, and has simple manufacturing method, low cost and is easy for manufacturing in large scale and commercial process.

Description

technical field [0001] The present invention relates to the technical field of non-volatile memories, in particular to BiFeO-based 3 Resistive random access memory based on thin film and its preparation method. Background technique [0002] The high-speed development of information technology depends on large-capacity, high-speed, non-volatile information storage technology. Non-volatile information storage technology has the advantage of maintaining information data when the power is cut off, and has been widely used in computer, automobile, modern industry and other fields. At present, the mainstream non-volatile memory is flash memory (Flash Memory), but flash memory has problems such as high operating voltage, slow speed, and poor endurance. With the continuous improvement of information storage technology requirements, it is necessary to develop low-power, High-speed, long-retention non-volatile memory. Currently, ferroelectric random access memory (FeRAM), magnetic ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00G11C11/56C23C20/08
Inventor 李润伟尹奎波刘宜伟李蜜陈斌
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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