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Electrode for in-situ electrical measurement for diamond anvil cell and method for producing the same

The invention relates to a technology of diamond counter-anvil and manufacturing method, which is applied to the field of boron-doped diamond film electrodes, and can solve the problems of difficulty in electrode arrangement, measurement failure, electrode deformation, etc., and achieve high chemical and electrochemical stability and improve reliability. , to overcome the effect of corrosion

Inactive Publication Date: 2009-08-19
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The early high-voltage electrical experiments on the diamond anvil all used metal wiring, and because the sample cavity was very narrow, it was very difficult to arrange the electrodes, and the electrodes themselves had to undergo serious deformation, making it impossible to measure the resistivity of the sample, etc. Electrical quantity
With the introduction of thin film deposition technology and micromachining technology, people directly deposit metal electrodes on the diamond anvil surface. Although the problem of electrode deformation is solved, it can only measure solid cold samples. Once encountering high temperature and high pressure conditions, metal film electrodes Reactions with the sample can cause the electrode to fail, resulting in measurement failure
In addition, the metal thin film electrode is still subjected to transverse shear force at the edge of the anvil surface, especially under ultra-high pressure, electrode fracture is still unavoidable

Method used

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  • Electrode for in-situ electrical measurement for diamond anvil cell and method for producing the same
  • Electrode for in-situ electrical measurement for diamond anvil cell and method for producing the same
  • Electrode for in-situ electrical measurement for diamond anvil cell and method for producing the same

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Embodiment 1

[0021] Example 1 Combined figure 1 and figure 2 The structure of the electrode of the present invention will be described.

[0022] figure 1 and figure 2 Among them, 1 is an electrode, and there are 4 electrodes. The ends of each electrode 1 on the surface of the diamond anvil are square and are located in the sample chamber 9 of the diamond anvil, and the electrode ends 3 on the side of the diamond anvil are connected. Electrode leads 5 with copper wires, electrode 1 of boron-doped diamond film are covered by insulating layer 2 of diamond film except two ends; 2 is diamond insulating layer; 3 is the electrode terminal on the side of diamond anvil; 4 5 is the electrode lead, and the electrode lead 5 is connected to the electrode terminal 3 on the side of the diamond anvil through the silver paste 4; 6 is the aluminum oxide insulating layer; 7 is the T301 steel gasket, and the aluminum oxide insulating layer 6 is placed on the On it; 8 is a diamond anvil, and two diamond ...

Embodiment 2

[0024] Example 2 Combined image 3 The process of making the electrode of the present invention is described.

[0025] Step 1: Soak the diamond anvil in a mixture of acetone and alcohol for 20 minutes to remove surface stains, take it out and rinse it with deionized water. After drying, it is placed in a vacuum chamber, and an aluminum oxide film is deposited on the diamond surface by magnetron sputtering. like image 3 (a) shown.

[0026] In the sputtering process, metal aluminum is used as the target material, oxygen and argon with a flow ratio of 30:2.0-3.0 are used as the working gas, the pressure in the vacuum chamber is kept at 0.8-1.2Pa, and the substrate temperature is kept at 200 ℃—300℃.

[0027] The second step: take out the diamond coated with aluminum oxide film, apply a layer of photoresist evenly on its surface, use photolithography technology to carve the crosshair shape on the diamond anvil surface, and then corrode it with corrosive solution (in phosphoric...

Embodiment 3

[0039] Embodiment 3 The manufacturing process of two electrodes on the diamond anvil of the present invention.

[0040] Whole technological process is identical with embodiment 2. It is only in the second step that photolithography is used to make an electrode isolation zone, which passes from one side of the diamond anvil through the sample cavity in the center of the anvil to the opposite side of the diamond anvil; the sixth step is to Two alumina squares were left on the sides of the diamond anvil.

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Abstract

The invention discloses an in-situ electrical measuring electrode that is used in diamond-pair anvil cells and a manufacturing method thereof, and belongs to the technical field of high-temperature and high-voltage devices. Four electrodes (1) are deposited on the surface of a diamond anvil cell (8) and distribute from an anvil surface to a lateral surface of the diamond anvil cell (8); the electrodes (1) are diamond films doped with boron; a diamond insulating layer (2) covers the anvil surface and the lateral surface of the diamond anvil cell (8) as well as the electrodes (1) thereof; the electrodes (1) are exposed at one end of the anvil surface, the exposed position lies inside a sample cavity (9), and the electrodes (1) are exposed at one end of the lateral surface and connected with an electrode lead (5). A diamond film microcircuit and the diamond insulating layer are simultaneously integrated onto the surface of the diamond anvil cell by utilizing the film deposition technique, the nanometer seeding technique, the masking technique and the photolithographic method. The manufacturing method of the in-situ electrical measuring electrode prevents the electrode from being destroyed by transverse shearing force and overcomes the electrode corrosion by samples under the high-voltage condition, thus widening the research field of electrical in-situ measurement under high voltage.

Description

technical field [0001] The invention belongs to the technical field of high-temperature and high-pressure devices, and in particular relates to a boron-doped diamond film electrode used for in-situ electrical quantity measurement under high-temperature and high-pressure conditions of a diamond counter-anvil and a manufacturing method thereof. Background technique [0002] The diamond counter-anvil is currently the only high-pressure generating device capable of generating ultra-high pressure (>100GPa). Using it, people can study the change characteristics of various physical quantities of matter under ultra-high pressure, and the in-situ measurement of the electrical properties of matter is one of the important aspects. [0003] Stability has very strict requirements, that is, ① the electrode cannot break under high pressure environment, ② cannot chemically react with the measured substance, and ③ cannot produce serious deformation. [0004] The early high-voltage electr...

Claims

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Application Information

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IPC IPC(8): G01R31/00G01N27/00
Inventor 高春晓刘才龙韩永昊彭刚胡廷静吴宝嘉李冬妹邹广田
Owner JILIN UNIV
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