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Anneal technique for improving battery electrical property

A technology of annealing process and electrical performance, applied in circuits, electrical components, climate sustainability, etc., can solve the problems of increasing contact resistance, difficult to optimize sub-processes, and difficult to optimize passivation temperature process, and achieve equipment Low investment, high production efficiency, and the effect of improving battery electrical performance

Inactive Publication Date: 2009-06-24
江苏韩华太阳能电池及应用工程技术研究中心有限公司 +1
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, process integration often makes it difficult to optimize the integrated sub-processes
For example, in order to form a good ohmic contact after sintering, the silver electrode must be mixed with a glass body in the silver paste in the integration process, and the glass body is used to burn through silicon nitride, but the glass body at the silver-silicon interface may increase the contact resistance, and the glass body at the interface Thickness and conductivity directly affect the series resistance (Rs), thereby affecting the fill factor (FF) and cell photoelectric conversion efficiency (Efficiency); in addition, in order to achieve the optimal silver electrode sintering temperature process, the passivation temperature of silicon nitride for crystalline silicon The process may not be optimal

Method used

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  • Anneal technique for improving battery electrical property
  • Anneal technique for improving battery electrical property
  • Anneal technique for improving battery electrical property

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0011] A 125×125mm monocrystalline cell manufactured by using low-frequency PECVD (PECVD generator frequency is 40kHz) to deposit silicon nitride anti-reflection film and manufacture based on screen printing is placed in a diffusion furnace tube (gas flow can be controlled) for annealing treatment, annealing The temperature is 370°C, the annealing time is 18min, the annealing atmosphere is a mixed gas of nitrogen and hydrogen, V H2 :V N2 =5:27, the efficiency change after annealing is shown in Table 1.

[0012]

Embodiment 2

[0014] A 156×156mm polycrystalline cell manufactured by using low-frequency PECVD (the PECVD generator frequency is 40kHz) to deposit silicon nitride anti-reflection film and manufacture based on screen printing is annealed in a diffusion furnace tube (the gas flow can be controlled), and the annealing temperature is The temperature is 330°C, the annealing time is 35min, the annealing atmosphere is a mixed gas of nitrogen and hydrogen, V H2 :V N2 =1:9, the efficiency change after annealing is shown in Table 2

[0015] Table 2

[0016]

Embodiment 3

[0018] A 156×156mm polycrystalline cell manufactured by using low-frequency PECVD (the PECVD generator frequency is 40kHz) to deposit silicon nitride anti-reflection film and manufacture based on screen printing is annealed in a diffusion furnace tube (the gas flow can be controlled), and the annealing temperature is The temperature is 395°C, the annealing time is 18min, and the annealing atmosphere is a mixed gas of nitrogen and hydrogen, V H2 :V N2 =1:9, the change in efficiency after annealing is shown in Table 3.

[0019] table 3

[0020]

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Abstract

The invention discloses an annealing process for improving the electric property of a cell, including the step of conducting annealing treatment to a screen printed crystalline silicon solar cell, wherein, inert gases (N2, Ar) are adopted to mix with the reducing gas of hydrogen with different proportions to anneal the crystalline silicon solar cell, and volume mixing proportion of the hydrogen is 5-100%. The annealing process adopts low-temperature special atmosphere to anneal the crystalline silicon solar cell; the process is compatible with the crystalline silicon cell technique; besides, the invention has low equipment investment and high production efficiency, and can effectively improve the electrical property of the cell and has the prospect for large-scale application.

Description

Technical field: [0001] The invention relates to a process for improving battery electrical properties, in particular to improving the electrical properties of crystalline silicon batteries prepared based on screen printing. Background technique: [0002] The rapid development of the photovoltaic industry worldwide has benefited from the continuous reduction in the manufacturing cost of screen-printed crystalline silicon solar cells. In order to reduce the cost of photovoltaic power generation, industrialized production of crystalline silicon solar cells simplifies the process steps as much as possible, such as the sintering process integrates the sintered aluminum film to form an aluminum back field, the silver electrode burns through silicon nitride to form an ohmic contact, and high-temperature heat treatment of silicon nitride to passivate the emission extremely these process steps. However, process integration often makes it difficult to optimize the integrated sub-pro...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 张高洁王景霄宋登元高周妙
Owner 江苏韩华太阳能电池及应用工程技术研究中心有限公司
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