Anneal technique for improving battery electrical property

A technology of annealing process and electrical performance, applied in circuits, electrical components, climate sustainability, etc., can solve the problems of increasing contact resistance, difficult to optimize sub-processes, and difficult to optimize passivation temperature process, and achieve equipment Low investment, high production efficiency, and the effect of improving battery electrical performance

Inactive Publication Date: 2009-06-24
江苏韩华太阳能电池及应用工程技术研究中心有限公司 +1
View PDF0 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, process integration often makes it difficult to optimize the integrated sub-processes
For example, in order to form a good ohmic contact after sintering, the silver electrode must be mixed with a glass body in the silver paste in the integration process, and the glass body is used to burn through silicon nitride, but the glass body at the silver-silicon interface may increase the contact resi...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Anneal technique for improving battery electrical property
  • Anneal technique for improving battery electrical property
  • Anneal technique for improving battery electrical property

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0011] A 125×125mm monocrystalline cell manufactured by using low-frequency PECVD (PECVD generator frequency is 40kHz) to deposit silicon nitride anti-reflection film and manufacture based on screen printing is placed in a diffusion furnace tube (gas flow can be controlled) for annealing treatment, annealing The temperature is 370°C, the annealing time is 18min, the annealing atmosphere is a mixed gas of nitrogen and hydrogen, V H2 :V N2 =5:27, the efficiency change after annealing is shown in Table 1.

[0012]

Embodiment 2

[0014] A 156×156mm polycrystalline cell manufactured by using low-frequency PECVD (the PECVD generator frequency is 40kHz) to deposit silicon nitride anti-reflection film and manufacture based on screen printing is annealed in a diffusion furnace tube (the gas flow can be controlled), and the annealing temperature is The temperature is 330°C, the annealing time is 35min, the annealing atmosphere is a mixed gas of nitrogen and hydrogen, V H2 :V N2 =1:9, the efficiency change after annealing is shown in Table 2

[0015] Table 2

[0016]

Embodiment 3

[0018] A 156×156mm polycrystalline cell manufactured by using low-frequency PECVD (the PECVD generator frequency is 40kHz) to deposit silicon nitride anti-reflection film and manufacture based on screen printing is annealed in a diffusion furnace tube (the gas flow can be controlled), and the annealing temperature is The temperature is 395°C, the annealing time is 18min, and the annealing atmosphere is a mixed gas of nitrogen and hydrogen, V H2 :V N2 =1:9, the change in efficiency after annealing is shown in Table 3.

[0019] table 3

[0020]

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses an annealing process for improving the electric property of a cell, including the step of conducting annealing treatment to a screen printed crystalline silicon solar cell, wherein, inert gases (N2, Ar) are adopted to mix with the reducing gas of hydrogen with different proportions to anneal the crystalline silicon solar cell, and volume mixing proportion of the hydrogen is 5-100%. The annealing process adopts low-temperature special atmosphere to anneal the crystalline silicon solar cell; the process is compatible with the crystalline silicon cell technique; besides, the invention has low equipment investment and high production efficiency, and can effectively improve the electrical property of the cell and has the prospect for large-scale application.

Description

Technical field: [0001] The invention relates to a process for improving battery electrical properties, in particular to improving the electrical properties of crystalline silicon batteries prepared based on screen printing. Background technique: [0002] The rapid development of the photovoltaic industry worldwide has benefited from the continuous reduction in the manufacturing cost of screen-printed crystalline silicon solar cells. In order to reduce the cost of photovoltaic power generation, industrialized production of crystalline silicon solar cells simplifies the process steps as much as possible, such as the sintering process integrates the sintered aluminum film to form an aluminum back field, the silver electrode burns through silicon nitride to form an ohmic contact, and high-temperature heat treatment of silicon nitride to passivate the emission extremely these process steps. However, process integration often makes it difficult to optimize the integrated sub-pro...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 张高洁王景霄宋登元高周妙
Owner 江苏韩华太阳能电池及应用工程技术研究中心有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap