Insulated trench gate electrode bipolar type transistor

Abstract

The invention provides a slot simulated gate bipolar transistor, which belongs to the technical field of semiconductor power devices. Based on the prior slot simulated gate bipolar transistor, the invention is additionally provided with a P<+> hole collecting zone (5), to avoid holes entering a P type zone (6) and achieve good action of bypassing the holes, thereby greatly weakening the parasitic thyristor effect, improving the safety operation zone of the device and particularly improving the high-temperature latching resistance of the device. Simultaneously, a metal emitter (8) of the invention is made into a slot metal electrode. Besides the reduction of the contact resistance of the device, the device can dissipate heat more easily and reduces temperature rise, thereby achieving excellent high-temperature operating characteristics. Furthermore, During the injection of the P<+> hole collecting zone(5) and an N<+> source(7) of the slot simulated gate bipolar transistor, an additional masking plate is needed, thereby properly lowering production cost.

Description

technical field [0001] The invention relates to a trench insulated gate bipolar transistor, which can be well used in high-temperature environments and belongs to the technical field of semiconductor power devices. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT) is a rapidly developing and widely used power electronic device. It utilizes the high input impedance of MOSFET, simple driving circuit and high current density of bipolar transistor, saturation A new device combined with the advantages of low pressure drop. Now it is widely used in induction cooker, UPS uninterruptible power supply, automotive electronic igniter, frequency converter, motor transmission system and other energy conversion devices. [0003] In 1982, when the insulated gate bipolar transistor was first proposed, it was a planar gate punch-through type, and its structure is as follows figure 1 As shown, it is sequentially epitaxial N on a high-concentration P+ substrate 2 + buff...

AI Technical Summary

Problems solved by technology

[0007] Compared with planar trench insulated gate bipolar transistors, traditional trench insulated gate bipolar transistors already have great anti-latch ability, but when working at high temperature, on the one hand, due to the increase in temperature, the carrier lifetime increase, the amplification factor of the PNP transistor increases, resulting in a larger hole current flowing through the P well region; on the other hand, the increase in temperature makes the mobility of holes greatly reduced, and the resistance of the P body region increases; both reasons will lead to Due to the increase of temperature, the traditional trench insulated gate bipolar transistor has a greatly reduced ability to resist latch-up, and the safe operating area is also reduced.

For example, the insulated gate bipolar transistor used in the steam iron substrate temperature regulator needs to work at a high temperature close to 200 degrees Celsius. At this time, the traditional trench insulated gate bipolar transistor will cause latch-up resistance due to the increase in temperature. A sharp drop, reduced reliability, how to seek better high temperature latch-up resistance is an urgent problem to be solved

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