Thin-film transistor and manufacture method thereof
A technology of thin-film transistors and gate electrodes, which is applied in the direction of transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the disadvantages of large-scale production of thin-film transistors, etc., and achieve the effects of light weight, improved performance, and novel structure
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Embodiment 1
[0044] Such as figure 1 In the structure shown, substrate 1 is made of Si substrate, gate electrode 2 is made of DC magnetron sputtered ITO transparent conductive film, ultraviolet curing glue is used as gate insulating layer 3, source electrode 5 is made of Cr metal film as electrode layer, and drain electrode 6 also uses Cr metal film as the electrode layer. Conductive layer 4 is polysilicon.
[0045] The preparation method is as follows:
[0046] ① Thoroughly clean the Si substrate first, and blow dry with dry nitrogen after cleaning;
[0047] ②Gate electrodes are prepared on the surface of the Si substrate by DC magnetron sputtering;
[0048] ③Etching the ITO gate electrode pattern by photolithography;
[0049] ④ Spin-coat the UV-curable adhesive grid insulating film on the Si substrate coated with the gate electrode by spin-coating method;
[0050] ⑤ Carrying out ultraviolet curing and heating and baking the formed organic gate insulating film;
[0051] 6. Prepare a...
Embodiment 2
[0055] Such as figure 1 In the structure shown, substrate 1 is made of Si substrate, gate electrode 2 is made of DC magnetron sputtered ITO transparent conductive film, ultraviolet curing glue and silicon dioxide are used as gate insulating layer 3, and source electrode 5 is made of Cr metal film as electrode layer, and the drain electrode 6 also uses Cr metal thin film as the electrode layer. Conductive layer 4 is polysilicon.
[0056] The fabrication process of the device is similar to that of Example 1.
Embodiment 3
[0058] Such as figure 1 In the structure shown, substrate 1 is made of Si substrate, gate electrode 2 is made of DC magnetron sputtered ITO transparent conductive film, ultraviolet curing glue and silicon dioxide are used as gate insulating layer 3, and source electrode 5 is made of Cr metal film as electrode layer, and the drain electrode 6 also uses Cr metal thin film as the electrode layer. Conductive layer 4 is amorphous silicon.
[0059] The fabrication process of the device is similar to that of Example 1.
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