Method for coating photoresist and method for forming photolithography pattern

Abstract

The invention discloses a photoresist coating method, which comprises the following steps of providing a semiconductor chip; rotating the semiconductor chip and spraying the photoresist on the area of the center or close to the center of the surface of the semiconductor chip, wherein, in the process of rotating the semiconductor chip, spraying gas to the nearly marginal area of the back of the semiconductor chip to prevent the photoresist from being coated on the back along the margin of the semiconductor chip. The invention also provides a formation method of lithography patterns, which can reduce or eliminate the defects caused by back washing.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for coating photoresist and a method for forming photolithography patterns. Background technique [0002] In the semiconductor manufacturing process, integrated circuits with various functions are formed on the semiconductor wafer through a series of processes such as photolithography, etching, doping, film deposition, planarization, and cleaning. The photolithographic process of the area plays a very important role. [0003] In the photolithography process, a photoresist layer is first formed on a semiconductor wafer; then the photoresist layer is baked and placed in an exposure device, and the photoresist layer is exposed through an exposure process, The pattern on the mask plate is transferred to the photoresist layer; then the exposed photoresist layer is post-exposure baked (Post Exposure Bake, PEB), and developed by a developing process to form...

AI Technical Summary

Problems solved by technology

[0011] In the step of forming a photoresist layer by the spin-coating method, it is necessary to spray cleaning liquid to the backside edge of the semiconductor wafer to clean (Backrinse) the backside of the semiconductor wafer to remove the pollution caused by the photoresist flowing to the backside along the edge of the semiconductor wafer , the pollution will pollute the loading stage of the exposure machine through the semiconductor wafer, which will affect the line width of the exposure process

[0012] However, when the back of the semiconductor wafer is cleaned by cleaning liquid, since the semiconductor wafer is in a rotating state, the solvent sprayed on the back of the semiconductor wafer will be thrown to the side wall of the spin coating equipment, and will be splashed (Spatter) to the photoresist. The surface of the layer, causing defects (Defect), which further makes the formed photolithographic pattern have defects, and causes defects in etching or ion implantation

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