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Method for preparing lanthanum nickelate conductive metallic oxide nano-film

A conductive metal and nano-film technology, applied in metal material coating process, ion implantation plating, coating, etc., can solve the problems of film thickness, low grain crystallinity, unsuitability, etc., and achieve simple process and high cost-effectiveness The effect of uniform, dense and smooth film

Inactive Publication Date: 2009-01-14
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

So far, although there have been reports in the literature on the preparation of preferentially oriented LaNiO3 thin films on Si substrates by radio frequency sputtering (see Applied Physics Letters, 1996, 68(11): 1430-1433), the method described in this article prepared Sputter deposited LaNiO 3 The film is thicker (thickness up to 500nm), and the preferred orientation degree is not high, and the grain crystallinity is not high
Therefore, as a buffer layer, it is impossible to grow high-quality ferroelectric thin film materials on it, and it is not suitable as a buffer layer for growing thinner films.

Method used

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  • Method for preparing lanthanum nickelate conductive metallic oxide nano-film

Examples

Experimental program
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Effect test

Embodiment 1

[0021] Preparation steps such as figure 2 Shown in: first Ni 2 o 3 , La 2 o 3 The oxide powder is mixed, and then the mixed material is pre-fired, and the pre-fired material is ball-milled in a ball mill, and pressed into a disc to obtain a ceramic target; then adjust the parameters of the sputtering machine to obtain a thickness of different by adjusting the sputtering time. etc. film. The specific steps are as follows:

[0022] 1. Preparation of target material:

[0023] First, analytically pure Ni 2 o 3 , La 2 o 3 Oxide powder as starting material, La 2 o 3 The powder is first pre-fired at 750°C for 3 hours, and then weighed with an analytical balance immediately, strictly according to Ni 2 o 3 , La 2 o 3 = The chemical ratio of 1:1 has prepared two kinds of raw materials. The proportioned and mixed materials are pre-fired at 850°C for 3 hours. After pre-burning, ball mill in a ball mill for 12 hours, and the ball milling medium is acetone. The ball-mille...

Embodiment 2

[0027] 1. Preparation of target material:

[0028] First, analytically pure Ni 2 o 3 , La 2 o 3 Oxide powder as starting material, La 2 o 3 The powder is first pre-fired at 800°C for 2 hours, and then weighed immediately with an analytical balance, strictly according to Ni 2 o 3 , La 2 o 3 = The chemical ratio of 1:1 has prepared two kinds of raw materials. The proportioned and mixed materials are pre-fired at 800°C for 4 hours. After pre-burning, it is ball milled in a ball mill for 15 hours, and the ball milling medium is acetone. The ball-milled material is pressed into a disc of φ50mm×4mm. Finally, the wafer was sintered at a high temperature of 1050° C. for 4 hours to obtain the ceramic target required for sputtering.

[0029] 2. Preparation of film materials:

[0030] The parameters of the sputtering machine are: the distance between the target and the substrate is 100 mm, the vacuum pressure of the back is 10 -4 Pa, the in-situ heating temperature of the s...

Embodiment 3

[0032] 1. Preparation of target material:

[0033] First, analytically pure Ni 2 o 3 , La2 o 3 Oxide powder as starting material, La 2 o 3 The powder is first pre-fired at 800°C for 2 hours, and then weighed immediately with an analytical balance, strictly according to Ni 2 o 3 , La 2 o 3 = The chemical ratio of 1:1 has prepared two kinds of raw materials. The proportioned and mixed materials are pre-fired at 900°C for 2 hours. After pre-burning, it was ball milled in a ball mill for 18 hours, and the ball milling medium was acetone. The ball-milled material is pressed into a disc of φ50mm×4mm. Finally, the wafer was sintered at a high temperature of 1150° C. for 2 hours to obtain the ceramic target required for sputtering.

[0034] 2. Preparation of film materials:

[0035] The parameters of the sputtering machine are: the distance between the target and the substrate is 100 mm, the vacuum pressure of the back is 10 -4 Pa, the in-situ heating temperature of the s...

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Abstract

Disclosed is a preparation method of a lanthanum nickelate conductive metal oxide nanometer film. The LaNiO3 nanometer film preparation method comprises: firstly, the preparation of a target material, namely oxide powders of Ni2O3 and La2O3 of an analytical reagent are mixed in a ratio of 1:1 for implementing the preheating and then ball grinding, then the powders are pressed into a round sheet with the diameter of 50 mm and thickness of 4 mm, and finally the round sheet is sintered into a ceramic target at a high temperature of 1050 to 1150 DEG C; and secondly, the preparation of a film material, namely a radio frequency magnetic control sputtering method is adopted, all the parameters of a sputtering machine are adjusted, and the film with the required thickness is obtained through sputtering and deposition after a substrate reaches a certain temperature by in situ heating. The film manufactured in the method has high preferred orientation and good electric conductivity, the surface is compact and smooth, and the resistance rate under room temperature is about 1m Omega cm. The film can be used as a buffer layer for the preparation of high quality perovskite structure ferroelectric film material, or used as a bottom electrode of a ferroelectric film device.

Description

technical field [0001] The invention relates to a preparation method in the technical field of chemical industry, in particular to a preparation method of a lanthanum nickelate conductive metal oxide nano film. Background technique [0002] NeO 3 (LNO) is a conductive metal oxide with a perovskite structure, a quasi-cubic structure, and a lattice constant of 0.384nm. Since LaNiO 3 The crystal packet parameter (a = 0.384nm) is very close to the ferroelectric thin film, and its chemical properties are similar, so it is often used as a buffer layer for growing ferroelectric thin films, so that the structure and performance of ferroelectric thin films can be optimized, and ferroelectric thin film devices can be improved. Integration properties with silicon substrates. It was also found that with LaNiO 3 Substituting metal as the bottom electrode of ferroelectric thin film devices can greatly enhance the fatigue resistance of ferroelectric thin film devices. In addition, com...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/08
Inventor 张丛春王亚攀石金川杨春生
Owner SHANGHAI JIAO TONG UNIV
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