Differential frequency mixing frequency cascade magnesium-doped near-stoichiometric ratio lithium niobate optical wavelength converter
A wavelength converter, near-stoichiometric technology, applied in instruments, optics, nonlinear optics, etc., can solve the problems of electro-optic coefficient and nonlinear coefficient decrease, unstable waveguide refractive index distribution, difficult to obtain tunable lasers, etc. Achieve the effect of improving nonlinear conversion efficiency, increasing flexibility, and reducing cost
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Embodiment 1
[0033] The present invention selects a near-stoichiometric lithium niobate (Mg:SLiNbO) based on magnesium doping 3 ) wafer; then fabricate a proton exchange optical waveguide on the wafer; after completing the proton exchange process, the waveguide is annealed; after annealing, an antiproton exchange is performed on the surface of the waveguide to form a buried proton exchange waveguide; The sector-shaped ferroelectric domain periodic inversion structure with a period range of 17-19 μm, that is, the wafer is polarized by an electric field at room temperature to realize the periodic inversion of the polarized domain of the wafer, so as to obtain a wide tuning range with stable performance and low loss. Optical wavelength converter. The wavelength converter is a single-domain dielectric wafer with a ferroelectric domain period reversal structure, and the upper and lower surfaces of the wafer are parallel.
Embodiment 2
[0035] The present invention comprises the following steps:
[0036] (1) Select a dielectric body, which is a ferroelectric single-domain crystal that grows spontaneously polarized along the Z direction during the growth process, and is a doped molar ratio of 2% or 3%. The near-stoichiometric ratio of miscellaneous magnesium ([Li]:[Nb]=48.5:51.5) lithium niobate (Mg:SLiNbO 3 ), cutting along the Z direction of the dielectric body, its thickness is 0.5mm, the upper and lower surfaces are parallel and both are polished, and the normal direction of the upper and lower surfaces is along the spontaneous polarization direction of the crystal; the cutting, its thickness is 0.2 to 1mm .
[0037] (2) Fabricate an annealed proton exchange optical waveguide (APE) optical waveguide on the +Z surface of the wafer. First in LiNbO 3 Deposit a layer of SiO with appropriate thickness on the wafer 2 As a mask; use photolithography to etch out its waveguide part, and other parts still have a...
Embodiment 3
[0042] Embodiment 3: the present invention comprises the following steps:
[0043] (1) Choose a magnesium-doped lithium niobate wafer with a thickness of 0.5mm, a length of 20mm, and a width of 5mm with a doping molar ratio of 2%, cut along the Z surface, and polish ± Z surfaces; for the cutting, the thickness is 0.2 to 1mm.
[0044] (2) Fabricate a series of waveguides with a width of 6 μm on the +Z surface using antiproton exchange technology; the antiproton exchange technology is to use LiNbO with 6 μm waveguide mask openings at a temperature of 200 ° C 3 The wafer was placed in an exchange source (pure benzoic acid C 6 h 5 Exchange in OOH); take out the wafer after 4 to 10 hours, send it into the quartz tube, increase the temperature in the tube to 350°C, and introduce oxygen to anneal the crystal; slowly pull the crystal out of the tube after annealing, and then put it into Antiproton exchange (KNO 3 :NaNO 3 :LiNbO 3 ) within 1 hour, the Li ions in the mixed solutio...
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