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Piezoelectric element, manufacturing method thereof and liquid discharge apparatus

A piezoelectric element and a manufacturing method technology, which are applied in the manufacture/assembly of piezoelectric/electrostrictive devices, electrical components, piezoelectric devices/electrostrictive devices, etc., and can solve problems such as low usefulness

Active Publication Date: 2008-11-12
FUJIFILM CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Non-180° domain rotation itself is previously known, however, non-180° domain rotation is usually irreversible, so its usefulness is low

Method used

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  • Piezoelectric element, manufacturing method thereof and liquid discharge apparatus
  • Piezoelectric element, manufacturing method thereof and liquid discharge apparatus
  • Piezoelectric element, manufacturing method thereof and liquid discharge apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0171] As a substrate, a Si single crystal substrate having a 300 nm-thick thermal oxide film formed on the surface was prepared. On the surface of the substrate, a 20 nm-thick Ti adhesion layer and a 200 nm-thick Pt lower electrode were sequentially formed by sputtering at a substrate temperature of 300°C.

[0172] Next, a 4 μ thick Nb-doped PZT piezoelectric film was formed on the lower electrode by sputtering at a substrate temperature of 550°C. Next, a Pt upper electrode with a thickness of 200 nm was grown at room temperature by sputtering to obtain the piezoelectric element of the present invention.

[0173] Finally, on the back side of the Si substrate, use Al as a mask to form a pattern using ICP-RIE (inductivelycoupled plasma-reactive ion etching) to form a 300μm×300μm ink chamber, and form a vibration plate and an ink chamber through the processing of the substrate itself. chamber and the ink nozzle of the ink discharge port to obtain the ink jet recording head of t...

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PUM

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Abstract

A piezoelectric device includes a piezoelectric film, and electrodes through which an electric field can be applied to the piezoelectric film along the thickness direction of the piezoelectric film. The piezoelectric film contains a ferroelectric phase in which the thickness direction and a normal of a plane determined by the spontaneous-polarization axis and the [010] axis makes an angle thetam satisfying the condition that -45 degrees<thetam<+45 degrees and thetam<>0 degrees. Further, the spontaneous-polarization axis or the [010] axis may be perpendicular to the thickness direction of the piezoelectric film.

Description

technical field [0001] The present invention relates to a piezoelectric element utilizing reversible non-180° domain rotation, a manufacturing method thereof, and a liquid discharge device using the piezoelectric element. Background technique [0002] A piezoelectric element including a piezoelectric body that expands and contracts with the increase or decrease in the intensity of the applied electric field, and an electrode that applies an electric field to the piezoelectric body is used for piezoelectric actuators mounted on inkjet recording heads, etc. . As piezoelectric materials, perovskite-type oxides such as lead zirconate titanate (PZT) are widely used. [0003] This piezoelectric material is a ferroelectric material with spontaneous polarization when no electric field is applied. In previous piezoelectric elements, an electric field was generally applied in a direction consistent with the spontaneous polarization axis of the ferroelectric, thereby utilizing the spo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L41/08H01L41/09H01L41/18H01L41/22B41J2/14B41J2/045B41J2/055B41J2/135B41J2/16C23C14/08H01L41/187H01L41/253H01L41/316
CPCB41J2/14201H01L41/18H01L41/0973Y10T29/42H10N30/2047H10N30/8536H10N30/8554H10N30/076H10N30/704
Inventor 小林宏之坂下幸雄
Owner FUJIFILM CORP
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