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PPSMZT-doped piezoelectric ceramic, preparation method thereof and use thereof

A technology of piezoelectric ceramics and ceramics, which is applied in the field of doped PSMZT piezoelectric ceramics and its preparation, can solve the problems of increasing output cost, deterioration of device performance, and difficult control of ceramic microstructure and performance, so as to improve piezoelectric performance and reduce The effect of sintering temperature

Inactive Publication Date: 2011-01-19
JINAN UNIVERSITY
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  • Abstract
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  • Application Information

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Problems solved by technology

Since the sintering temperature of traditional lead-based piezoelectric ceramics is 1200-1350°C, during the preparation of multilayer piezoelectric ceramic devices, there is a link of firing internal electrodes. On the one hand, high-temperature sintered laminated piezoelectric devices require noble metals with high melting points. As an internal electrode, the output cost is increased; on the other hand, high-temperature sintering will cause the volatilization of PbO, which makes it difficult to control the microstructure and properties of the ceramic, damages the internal electrode, and deteriorates the performance of the device (He Jie, Sun Qingchi. SiO 2 Effects on the properties of low-temperature sintered PMSZT piezoelectric ceramics. Piezoelectricity and Acousto-Optics, 2008, 30(2): 224-227)

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  • PPSMZT-doped piezoelectric ceramic, preparation method thereof and use thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Embodiment 1: (no doping piezoelectric ceramics)

[0031] (1) Weigh Nb according to the molar percentage as Nb:Co=2:1 2 o 5 and Co 2 o 3 Raw materials were dried at 120°C for 5 hours, mixed and ball milled, and CoNb was synthesized at 1100°C 2 o 6 ;

[0032] (2) According to the general formula Pb 0.98 Sr 0.02 (Mn 1 / 3 Sb 2 / 3 ) x (Zr 0.5 Ti 0.5 ) 1-x o 3 , 0 ≤ x ≤ 0.1 mole percent weighing Pb 3 o 4 , SrCO 3 , MnO 2 , Sb 2 o 3 , ZrO 2 and TiO 2 Raw materials, mixed, ball milled for 10 hours, dried at 120°C for 5 hours, passed through an 80-mesh sieve, pre-fired at 850°C and kept for 3 hours to synthesize PSMZT pre-calcined product;

[0033] (3) After pulverizing the PSMZT calcined product, 0.15wt.% CuO+0.2wt.% Bi 2 o 3 +0.2wt.%Li 2 CO 3 +0.15wt.%CoNb 2 o 6 Weigh CuO, Bi 2 o 3 , Li 2 CO 3 、CoNb 2 o 3 Add NiO raw material into PSMZT calcined powder and mix, ball mill again for 19h, dry at 120°C for 5h, pass through 60 mesh sieve, add 7% pol...

Embodiment 2

[0037] Embodiment 2: (doping concentration 0.05%)

[0038] (1) Weigh Nb according to the molar percentage as Nb:Co=2:1 2 o 5 and Co 2 o 3 Raw materials were dried at 120°C for 5 hours, mixed and ball milled, and CoNb was synthesized at 1100°C 2 o 6 ;

[0039] (2) According to the general formula Pb 0.98 Sr 0.02 (Mn 1 / 3 Sb 2 / 3 ) x (Zr 0.5 Ti 0.5 ) 1-x o 3 , 0 ≤ x ≤ 0.1 mole percent weighing Pb 3 o 4 , SrCO 3 , MnO 2 , Sb 2 o 3 , ZrO 2 and TiO 2 Raw materials, mixed, ball milled for 10 hours, dried at 120°C for 5 hours, passed through an 80-mesh sieve, pre-fired at 850°C and kept for 3 hours to synthesize PSMZT pre-calcined product;

[0040] (3) After pulverizing the PSMZT calcined product, 0.15wt.% CuO+0.2wt.% Bi 2 o 3 +0.2wt.%Li 2 CO 3 +0.15wt.%CoNb 2 o 6 +0.05wt.%NiO weighs CuO, Bi 2 o 3 , Li 2 CO 3 、CoNb 2 o 3 Add NiO raw material into PSMZT calcined powder and mix, ball mill again for 19h, dry at 120°C for 5h, pass through 60 mesh sieve, ad...

Embodiment 3

[0045] Embodiment 3: (doping concentration 0.1%)

[0046] (1) Weigh Nb according to the molar percentage as Nb:Co=2:1 2 o 5 and Co 2 o 3 Raw materials were dried at 120°C for 5 hours, mixed and ball milled, and CoNb was synthesized at 1100°C 2 o 6 ;

[0047] (2) According to the general formula Pb 0.98 Sr 0.02 (Mn 1 / 3 Sb 2 / 3 ) x (Zr 0.5 Ti 0.5 ) 1-x o 3 , 0 ≤ x ≤ 0.1 mole percent weighing Pb 3 o 4 , SrCO 3 , MnO 2 , Sb 2 o 3 , ZrO 2 and TiO 2 Raw materials, mixed, ball milled for 10 hours, dried at 120°C for 5 hours, passed through an 80-mesh sieve, pre-fired at 850°C and kept for 3 hours to synthesize PSMZT pre-calcined product;

[0048] (3) After pulverizing the PSMZT calcined product, 0.15wt.% CuO+0.2wt.% Bi 2 o 3 +0.2wt.%Li 2 CO 3 +0.15wt.% CoNb 2 o 6 +0.1wt.%NiO weighs CuO, Bi 2 o 3 , Li 2 CO 3 、CoNb 2 o 3 Add NiO raw material into PSMZT calcined powder and mix, ball mill again for 19h, dry at 120°C for 5h, pass through a 60 mesh sieve, a...

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Abstract

The invention discloses a PPSMZT-doped piezoelectric ceramic, a preparation method thereof and use thereof. The preparation method comprises the following steps: synthesizing a ternary Pb0.98Sr0.02(Mn1 / 3Sb2 / 3)x(Zr0.5Ti0.5)1-xO3(PSMZT) pre-burnt product; doping cobalt-niobium-bismuth-lithium-copper-nickel low-melting-point glass with the pre-burnt product according a stoichiometric ratio; granulating; tabletting; removing bonder; sintering; polishing; firing silver ink; and polarizing and thus obtaining the PPSMZT-doped piezoelectric ceramic. The method of the invention obviously reduce the sintering temperature of the ceramic and retaining the performance of the ceramic, is applicable to high-power piezoelectric material, and provides a raw material for manufacturing laminated piezoelectric ceramic elements.

Description

technical field [0001] The invention belongs to the field of low-temperature sintered electronic ceramic materials and its manufacture, and in particular relates to a doped PSMZT piezoelectric ceramic and its preparation method and application. Background technique [0002] In recent years, with the development of piezoelectric devices towards miniaturization, miniaturization and integration, exploring low sintering temperature and high-performance piezoelectric ceramic materials has become an important direction for the development of piezoelectric ceramic devices. Lead zirconate titanate (PZT)-based piezoelectric ceramics have excellent electromechanical properties and are widely used in piezoelectric, pyroelectric or ferroelectric devices, such as electromechanical sensors, transducers, transformers, ultrasonic motors or computer memory display devices, etc. . [0003] my country is a major producer and exporter of piezoelectric ceramics and devices in the world. Over t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/493C04B35/622H01L41/187H10N30/853
Inventor 刘彭义常鹏祝兰陈伟业
Owner JINAN UNIVERSITY
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