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Artificial synthetic method of high-pure SiC power for semiconductor single-crystal growth

A high-purity silicon carbide powder and artificial synthesis technology, which is applied in the field of silicon carbide powder synthesis, can solve the problems that the purity cannot reach the growth of semiconductor single crystal and the impurity content is high, and achieve the effect of improving the purity and low impurity concentration.

Active Publication Date: 2008-11-12
SICC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The oxide content of SiC powder synthesized by this method is up to 1wt%, and there are hard solid agglomerates, which require crushing, pickling and other processes, so that the impurity content is high, and its purity cannot reach the level of growing semiconductor single crystals.

Method used

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  • Artificial synthetic method of high-pure SiC power for semiconductor single-crystal growth
  • Artificial synthetic method of high-pure SiC power for semiconductor single-crystal growth

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] (1) Take C powder and Si powder at a molar ratio of 1:1, wherein the purity of C powder is greater than 99.998%, and the particle size is less than 500 μm, and the purity of Si powder is greater than 99.998%, and the particle size is less than 500 μm;

[0016] (2) Perform initial synthesis, mix the obtained C powder and Si powder evenly, put them into a crucible, place the crucible in an intermediate frequency induction heating growth furnace; evacuate the growth chamber, and raise the temperature to 1000°C; then Fill the growth chamber with high-purity argon gas with a purity greater than 99.999%, heat it to 1500°C, keep it for 15 minutes, and then lower it to room temperature; use a high-purity graphite mortar to grind the agglomerates larger than 1 cm in the reaction product to a size less than 1mm powder, the agglomerate is very loose, and will not introduce other metal impurities due to grinding;

[0017] (3) Carry out secondary synthesis, mix the product powder ob...

Embodiment 2

[0020] The difference between this example and Example 1 is that the growth chamber of the intermediate frequency induction heating growth furnace is filled with a mixed gas of argon and hydrogen during the two synthesis, and the volume ratio of argon and hydrogen is 90:10 , the purity of argon and hydrogen are greater than 99.999%. Finally, a high-purity β-phase SiC powder suitable for semiconductor SiC single crystal growth with a particle size of less than 20 μm is obtained.

Embodiment 3

[0022] The difference between this example and Example 1 is that in the secondary synthesis of step (3), the synthesis temperature is heated to 1800° C., and the synthesis time is 5 hours, so that a high-temperature compound suitable for semiconductor SiC single crystal growth with a particle size of less than 20 μm is obtained. Pure α-phase SiC powder.

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Abstract

The invention provides a method for artificially synthesizing high-purity carborundum powder used for growing semiconductor single crystal. The method comprises the following steps of: (1) taking Si powder and C powder according to a mol ratio of 1 to 1; (2) putting the Si powder and the C powder into a crucible after the Si powder and the C powder are mixed uniformly, putting the crucible in a medium frequency induction heating furnace, vacuumizing a growth chamber of the heating furnace, and increasing the temperature to 1000 DEG C; charging high-purity argon gas, helium gas or mixture of argon gas and hydrogen into the growth chamber, heating the mixed gas up to a synthetic temperature of 1000 DEG C, and reducing the synthetic temperature to room temperature after maintaining for certain reaction time; (3) uniformly mixing powder of a product acquired in the primary synthesis, heating the product up to a secondary synthetic temperature of between 1600 and 2000 DEG C, synthesizing for 2 to 10 hours, and reducing the synthesized product to the room temperature to acquire high-purity SiC powder lot applicable to the semiconductor SiC single crystal growth. The method adopts a secondary synthetic method, not only can ensure that Si and C simple substance which are remained during the primary synthesis can completely react, but also can effectively remove most impurity elements carried in the Si powder and the C powder.

Description

technical field [0001] The invention relates to an artificial synthesis method of high-purity silicon carbide powder used for semiconductor single crystal growth, and belongs to the technical field of silicon carbide powder synthesis. Background technique [0002] Silicon carbide single crystal has unique characteristics such as large band gap, high breakdown electric field, high thermal conductivity, high electron saturation drift velocity, small dielectric constant, strong radiation resistance, and good chemical stability. , storage, detection and other optoelectronic devices and high-temperature, high-frequency, high-power electronic devices have broad application prospects, and have developed rapidly in single crystal substrates, homoepitaxial semiconductor thin films and device processes, and are the most ideal third-generation One of the semiconductors. Semi-insulating silicon carbide has low dielectric loss at high frequencies, making it a great choice as a single-cr...

Claims

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Application Information

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IPC IPC(8): C01B31/36
Inventor 胡小波宁丽娜李娟王英民徐现刚
Owner SICC CO LTD
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