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Stratified structure low-voltage ZnO piezoresistor preparation method

A technology of piezoresistor and layered structure, applied in the direction of piezoresistor core, piezoresistor, etc., can solve the problems of large leakage current, no major development, complicated process, etc., and achieve the improvement of electrical parameter value Effect

Inactive Publication Date: 2008-10-15
KUNMING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the thick film is thin after all, and the surge resistance of the resistor will naturally decrease with the decrease of the thickness. At the same time, the leakage current will increase, which will reduce the efficacy of the resistor and make it unable to perform its due function; Although the performance of the laminated valve plate is ideal, the process is complicated, the cost is high, and the production yield is low; the research on the ideal formula for low pressure and pressure sensitivity has not been greatly developed in recent years, etc.

Method used

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  • Stratified structure low-voltage ZnO piezoresistor preparation method
  • Stratified structure low-voltage ZnO piezoresistor preparation method
  • Stratified structure low-voltage ZnO piezoresistor preparation method

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Experimental program
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Effect test

Embodiment 1

[0016] Embodiment 1: as figure 1 As shown, the manufacturing method of the layered structure low-voltage ZnO varistor ceramics is to use ZnO powder first, add 0.5% TiO by molar ratio 2 , 0.3% SiO 2 , 0.7% Cr 2 o 3 , 5% PbO, 2% B 2 o 3 , 5% nanometer ZnO powder forms mixed raw material 1, then this raw material is in planetary ball mill, adds water and alcohol and grinds and mixes for 3 hours; (dried, then passed through a 320-mesh standard sieve), pressed into blocks under a certain pressure, pre-fired at 600-750°C, ground again and put into a ball mill tank with water and alcohol to grind for 8-12 hours; the ball-milled material The slurry is dried and granulated (adding an appropriate amount of 7% PVA aqueous solution to the dried powder, the shape is like fish scales, which means that when the mixture is uniform, then pass through a 40-mesh standard sieve, pre-compress into blocks with a pressure of 50Mpa, and then break into pieces. Go through 45 mesh standard sieves...

Embodiment 2

[0019] Embodiment 2: as figure 1 As shown, the manufacturing method of the layered structure low-voltage ZnO varistor ceramics is to use ZnO powder first, add 0.5% TiO by molar ratio 2 , 0.4% SiO 2 , 0.5% Cr 2 o 3 , 5% PbO, 2% B 2 o 3, 8% nanometer ZnO powder forms mixed raw material 1, then this raw material is in planetary ball mill, adds water and alcohol and grinds and mixes for 3 hours; (dried, then passed through a 320-mesh standard sieve), pressed into blocks under a certain pressure, pre-fired at 600-750°C, ground again and put into a ball mill tank with water and alcohol to grind for 8-12 hours; the ball-milled material The slurry is dried and granulated (adding an appropriate amount of 7% PVA aqueous solution to the dried powder, the shape is like fish scales, which means that when the mixture is uniform, then pass through a 40-mesh standard sieve, pre-compress into blocks with a pressure of 50Mpa, and then break into pieces. Go through 45 mesh standard sieves ...

Embodiment 3

[0022] Embodiment 3: as figure 1 As shown, the manufacturing method of the layered structure low-voltage ZnO varistor ceramics is to use ZnO powder first, add 0.5% TiO by molar ratio 2 , 0.4% SiO 2 , 0.5% Cr 2 o 3 , 5% PbO, 2% B 2 o 3 , 8% nanometer ZnO powder forms mixed raw material 1, then this raw material is in planetary ball mill, adds water and alcohol and grinds and mixes for 3 hours; (dried, then passed through a 320-mesh standard sieve), pressed into blocks under a certain pressure, pre-fired at 600-750°C, ground again and put into a ball mill tank with water and alcohol to grind for 8-12 hours; the ball-milled material The slurry is dried and granulated (adding an appropriate amount of 7% PVA aqueous solution to the dried powder, the shape is like fish scales, which means that when the mixture is uniform, then pass through a 40-mesh standard sieve, pre-compress into blocks with a pressure of 50Mpa, and then break into pieces. Cross 45 mesh standard sieves agai...

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Abstract

The invention relates to a production method of a low-voltage and voltage-sensitive ZnO ceramic material with a laminar structure and a resistance that is produced by the ZnO ceramic material, and the invention belongs to the technical field of the production of electrical apparatus elements and materials. One group of raw materials is the mixed material that consists of ZnO and any oxide powder that is added into ZnO and selected from the oxides nano ZnO and doping elements of Bi, Al, Fe, Eu, Pr, La, Ce, Nd, B, Si, Mn, Cr, Co, Pb and Ti; the other group of raw materials is the mixed material that does not have addition elements or comprises ZnO that is blended with part of the oxides that are selected from the oxides of Al, Ti, Mn, Cr and Co; the two groups of powder materials are placed into a mold according to a certain proportion, then pressed, molded and gradually heated, and heat-preserved colloid discharge and heated agglomeration are implemented, thus obtaining the low-voltage and voltage-sensitive ZnO ceramic material with the laminar structure; the surface processing of the ZnO ceramic material is implemented, silver is burned on the surface of the ZnO ceramic material by electrodes, and the ZnO ceramic material is tested and encapsulated, thus obtaining the product. The low-voltage and voltage-sensitive ZnO ceramic material with the laminar structure has the advantages of simple technique, lower cost, good performance and wide application range, and the resistance that is produced by the ZnO ceramic material has good repeatability, stability and consistency, as well as remarkably improved electric parameter values.

Description

Technical field: [0001] The invention relates to a low-voltage ZnO varistor with a layered structure, belonging to the technical field of electrical components and material manufacturing thereof. Background technique: [0002] Low-voltage ZnO varistors were first researched and developed abroad in the 1980s. Low-voltage ZnO varistors have the dual excellent characteristics of low-voltage sensitive voltage and high dielectric coefficient, and strong surge resistance. Greatly reduced, it has the advantages of low cost, excellent non-ohmic characteristics, fast response time, small leakage current, large flow capacity, etc., and is widely used in electronic equipment, power systems and other fields. With the miniaturization and integration of electronic products, the demand for low-voltage varistors is increasing, and it is a promising compound functional resistance element. [0003] There are generally two main methods to reduce the varistor voltage. One is to reduce the thi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01C7/112
Inventor 甘国友王立惠严继康孙加林杜景红陈敬超
Owner KUNMING UNIV OF SCI & TECH
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