Negative fluorine-contained photoresist composition and its application in polymer optical waveguide device

A technology of photoresist and composition, applied in the direction of optical waveguide light guide, light guide, optical element, etc., can solve the problem of large light loss and so on

Inactive Publication Date: 2008-08-20
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The cross-linked Tg of SU-8 series photoresist can reach over 200°C, which can fully meet the requirements, but the optical loss in the optical communication band (1310 and 1550nm) is relatively large

Method used

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  • Negative fluorine-contained photoresist composition and its application in polymer optical waveguide device
  • Negative fluorine-contained photoresist composition and its application in polymer optical waveguide device
  • Negative fluorine-contained photoresist composition and its application in polymer optical waveguide device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] Dissolve 10 g of fluorinated bisphenol A in excess formaldehyde (5.4 g, 40% formaldehyde solution), under the catalysis of concentrated sulfuric acid (0.39 g), raise the temperature to 75 ° C, and react at this temperature for 6 h. Rinse with a large amount of distilled water until the solution becomes neutral (pH value is 7), and put it into a vacuum drying oven for dehydration. The epichlorohydrin (50g) that then adds in the product, heats up and melts and catalyzes with solid caustic soda, adds 0.25g NaOH every 0.5h, and reacts altogether for 8 hours. After the addition, keep at 60°C for 6h to complete the cyclization reaction. Steam the unreacted epichlorohydrin, then extract with toluene, filter and remove benzene to obtain fluorine-containing epoxy resin that can be used to prepare polymer optical waveguide devices, such as image 3 The structural formula of this example product. The yield is 91.3%, Mn=1071, Mw / Mn=1.8281, 1 H NMR (500MHz, CDCl 3 , TMS): 66.88-...

Embodiment 2

[0036] 5.000g of fluorine-containing epoxy resin (obtained by the method in Example 1, Mn=1071, Mw / Mn=1.8281), 0.500g of triphenylhexafluorosulfonium phosphate and 3.667g of cyclopentanone were mixed to obtain a A photoresist solution.

[0037] On a silicon wafer coated with a silicon dioxide film (with H 2 SO 4 :H 2 o 2 =7:3 solution has been processed) spin-coat this photoresist solution on, the rotating speed is 500rpm, 9s, 1000rpm, 30s; Bake 20min at 95 ℃; Photoresist film thickness is about 8 μm, mask (strip shape Waveguide mask, 3×5cm 2 ) and UV exposure (power 1000w, wavelength 200-400nm) for 60s; middle baking at 120°C for 60min; development in propylene glycol monomethyl ether acetate (PGMEA) for 20s; post-baking at 130°C for 30min to obtain Straight waveguide devices.

Embodiment 3

[0039] 5.000g of fluorine-containing epoxy resin (obtained by the method in Example 1, Mn=1071, Mw / Mn=1.8281), 0.500g of iodonium diphenylhexafluorophosphate and 3.667g of cyclopentanone were mixed to obtain a A photoresist solution.

[0040] On a silicon wafer coated with a silicon dioxide film (with H 2 SO 4 :H 2 o 2 =7:3 solution processed) spin-coat this photoresist solution, the rotating speed is 500rpm, 9s, 1000rpm, 30s, the thickness of photoresist layer is about 8 μ m; Bake 30min under 80 ℃; Mask (strip waveguide Mask plate, 3×5cm 2 ) and UV exposure (power 1000w, wavelength 200-400nm) for 60s; bake at 120°C for 60min; develop in butyrolactone for 20s; then bake at 130°C for 30min. The scanning electron micrographs of the straight waveguide are as follows: figure 2 As shown, the surface is regular and the sidewall is steep. And it is measured that at a wavelength of 1550nm, the optical loss of the 6×6μm straight waveguide strip is only 0.21dB / cm.

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Abstract

The invention belongs to optical waveguides device field, particularly relates to a negativity photoresist composition containing fluorine capable of using as polymers optical waveguides material and its application in preparing polymers optical waveguides device. The negativity photoresist composition containing fluorine contains 5.0-7.001920598hoto-induced acid-preparing object, 50.0-75.0 2.124886e-314poxy resins containing fluorine shown as formula (1) and 20.0-45.0wtH%wolvent by weight, R is chloridization (CCL2) or no-chloridization (CH2) methyl radical, n is 1-8. Because partly hydrogen atoms are superseded by fluorine atomics in epoxy resins containing fluorine, the absorption in communicating wave range is very small and the epoxy resins containing fluorine can be used as polymers optical waveguides material for preparing optical waveguides device. The photoresist composition can expose and form image to prepare optical waveguides device in ultraviolet wavelength range of 200-400nm and also can adjust exposal wavelength through changing kinds of photo-induced acid-preparing object.

Description

technical field [0001] The invention belongs to the field of optical waveguide devices, and in particular relates to a negative fluorine-containing photoresist composition which can be used as a polymer optical waveguide material and the application of the composition in preparing polymer optical waveguide devices. technical background [0002] Photoresist is currently mainly used in microlithography, manufacturing microelectronic devices and photochemical devices. The basic manufacturing process is to first coat the photoresist on the substrate material, then perform pre-baking to evaporate the solvent, and then expose the photoresist layer to the activating radiation source through the mask plate, and the activating radiation source makes the photolithography The adhesive layer undergoes photochemical changes, and finally develops it to obtain the corresponding pattern. [0003] Photoresist is divided into positive photoresist and negative photoresist. When the positive ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/038G03F7/00G02B6/138G02B6/13
Inventor 崔占臣费旭万莹胡娟
Owner JILIN UNIV
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