Method for preparing antimony-doping tin oxide thin film carrier material

An antimony-doped tin oxide and carrier material technology, applied in metal material coating process, ion implantation plating, coating and other directions, can solve the problem of not fully satisfying the conductivity and chemical stability of carrier materials and the stability of biological signal detection sensitivity chips It has problems such as poor performance and expensive biological signal detection equipment, and achieves the effects of strong specific label-free electrical detection, high-sensitivity label-free electrical detection, and low resistivity.

Inactive Publication Date: 2008-08-06
KUNMING UNIV OF SCI & TECH
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AI Technical Summary

Problems solved by technology

However, despite the rapid development of gene chip technology for more than ten years, it still cannot become a technology that can be generally used in clinical medicine and experimental research, and it faces many key problems that need to be solved urgently.
[0003] At present, the most mature and widely used detection technology in gene chips is the fluorescent labeling method. The disadvantages of this method are: the target samples to be detected need to be labeled with fluorescein, the process is complicated and the technical cost is high; the detection equipment of biological signals (Gene chip scanner) is expensive and relatively large in size, making it difficult to achieve portability and miniaturization; biological signal detection sensitivity and chip stability are poor, etc.
After searching the prior art literature, it is found that the gene chip carrier materials that can be applied to the label-free electrical detection technology include silicon-based materials (Si / SiO 2 thin films, single crystal Si substrates, Si nanowires, etc.), conductive metals (Au, Pt, etc.), carbon materials (graphite, carbon nanotubes, etc.) and conductive resins, etc., but these materials cannot fully meet the requirements for carrier materials. Requirements with excellent electrical conductivity and good chemical stability

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  • Method for preparing antimony-doping tin oxide thin film carrier material

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Experimental program
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Embodiment 1

[0024] (1) Antimony oxide (Sb) with a purity of 99.99% 2 O 3 ) and tin oxide (SnO 2 ) powder is pressed into a billet, and then sintered at 1300°C to form an antimony-doped tin oxide sputtering target. The Sb in the target 2 O 3 The mass percentage (wt.%) is 4%, SnO 2 The mass percentage (wt.%) is 96%; the size of the target is 60mm in diameter and 6mm in thickness. Before sputtering, the surface of the target is polished with sandpaper, then cleaned with analytical pure acetone and deionized water, and then placed in In an oven, keep warm at 120°C for 3 hours to remove surface oil and other impurities;

[0025] (2) Use ordinary glass slides as the film substrate material, fully wash them with analytical pure acetone and deionized water before sputtering, then put them in an oven, and keep them warm at 80°C for 2 hours;

[0026] (3) Install and put the target material and glass slide pretreated in steps (1) and (2) into the magnetron sputtering apparatus, first pre-sputte...

Embodiment 2

[0032] (1) antimony oxide (Sb) with a purity of 99.99% 2 O 3 ) and tin oxide (SnO 2 ) powder is pressed into a billet, and then sintered at 1300°C to form an antimony-doped tin oxide sputtering target. The Sb in the target2 O 3 The mass percentage (wt.%) is 4%, SnO 2 The mass percentage (wt.%) of the target material is 96%; the size of the target material is 60mm in diameter and 6mm in thickness. Before sputtering, the surface of the target material is sanded with sandpaper, then cleaned with analytical pure acetone and deionized water, and then placed in In an oven, keep the temperature at 120 °C for 3 hours to remove impurities such as oil stains on the surface;

[0033] (2) Use a common glass slide as the film base material, fully clean it with analytically pure acetone and deionized water before sputtering, and then put it into an oven and keep it at 80°C for 2 hours;

[0034] (3) Install and put the pre-treated target and glass slides in steps (1) and (2) into the mag...

Embodiment 3

[0040] (1) Antimony oxide (Sb) with a purity of 99.99% 2 O 3 ) and tin oxide (SnO 2 ) After the powder is pressed into a billet, it is sintered at 1400 °C to form an antimony-doped tin oxide sputtering target. 2 O 3 The mass percentage (wt.%) is 10%, SnO 2 The mass percentage (wt.%) of the target material is 90%; the size of the target material is 60mm in diameter and 6mm in thickness. Before sputtering, the surface of the target material is sanded with sandpaper, then cleaned with analytical pure acetone and deionized water, and then placed in In an oven, keep the temperature at 120 °C for 3 hours to remove impurities such as oil stains on the surface;

[0041] (2) Use a common glass slide as the film base material, fully clean it with analytically pure acetone and deionized water before sputtering, and then put it into an oven and keep it at 80°C for 2 hours;

[0042] (3) Install and put the pre-treated target and glass slides in steps (1) and (2) into the magnetron spu...

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Abstract

The invention relates to a method for preparing antimony doped tin dioxide thin film carrier material and the carrier material which is prepared is suitable for gene chips of an unmarked electrical measuring technique. The method comprises: using antimony doped tin dioxide to sputter target material, utilizing a magnetron sputtering method to prepare antimony doped tin dioxide thin film, then, hydroxylating, amino-silanizating, and aldehydizing the thin film to modify, and preparing the antimony doped tin dioxide thin film carrier material which is modified by aldehyde groups and used for the gene chips. The carrier material which is prepared through adopting the method of the invention is characterized in that the surface is flat and compact, the thickness is even, the concentration of active groups is high, the hydrophilic property is good, the chemical stability is high, the electrical resistivity is low, and the like, the carrier material can realize unmarked electrical measurement, recognition and analysis for the high sensitivity, the high reliability and the strong specificity of biological signals, and the material is very suitable for the carrier material of the gene chips of the unmarked electrical measuring technique. The method of the invention is also characterized in that the preparing technique is simple and easy to do, the cost is low, and industrial production is easily realized.

Description

technical field [0001] The invention relates to a method for preparing an antimony-doped tin oxide thin film carrier material, in particular to a method for preparing an antimony-doped tin oxide thin film carrier material for a gene chip suitable for a label-free electrical detection technology. Background technique [0002] Biochip technology represented by gene chips, because it can detect cells, proteins, nucleic acids, and other biomolecules accurately, quickly, and with high throughput, is widely used in the rapid diagnosis and treatment of diseases, the screening of new drugs, and pharmacogenomics. , gene mutation detection, optimal breeding of crops, judicial identification, environmental testing and national defense and many other fields have been widely used. However, despite the rapid development of gene chip technology for more than ten years, it still cannot become a technology that can be generally used in clinical medicine and experimental research, and it face...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/14C23C14/35C23C14/58C23C14/54B22F3/12
Inventor 张玉勤蒋业华周荣
Owner KUNMING UNIV OF SCI & TECH
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