Single slice high-gain low-noise amplifier

A low-noise amplifier, high-gain technology, used in improving amplifiers to expand bandwidth, improving amplifiers to increase efficiency, and improving amplifiers to reduce noise effects, etc. It can solve the difficulty of input impedance matching, the contradiction between input matching, and narrow temperature range. problem, to achieve the effect of favorable stability, wide bandwidth, and wide operating temperature range

Inactive Publication Date: 2008-03-05
NO 24 RES INST OF CETC
View PDF0 Cites 14 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to invent a single-chip high-gain low-noise amplifier to overcome the narrow temperature range, poor consistency, large volume and the gap between noise figure and bandwidth and input matching in the single-chip low-noise amplifie

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Single slice high-gain low-noise amplifier
  • Single slice high-gain low-noise amplifier
  • Single slice high-gain low-noise amplifier

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] The content of the invention in the description of the present invention is the specific embodiment, which will not be repeated here. The working principle and the requirements for the parameters of each component will be further described below only in conjunction with the accompanying drawings.

[0030] The low noise amplifier circuit block diagram of the present invention is shown in Figure 3, and the low noise amplifier circuit of the present invention includes a first-stage amplifying circuit, a second-stage amplifying circuit, a resistor feedback network, an input matching network, and an output matching network.

[0031] The structure diagram of the low noise amplifier circuit of the present invention is shown in FIG. 4 .

[0032] The circuit mainly includes two stages through the amplification part. The signal is amplified for the first time through the first-stage common-emitter amplifier, and then passed through the second-stage Darlington compound composed of...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

This invention discloses a single-chip high gain and low noise amplifier including: a primary amplifier, a secondary amplifier, a resistance feed-back network, an input match network and an output match network, in which, the amplifier works in the bands of 10MHz-550MHz not needing input and output matches from outside, so the circuit is simple and the volume is small.

Description

(1) Technical field [0001] The invention relates to a low-noise amplifier, in particular to a single-chip high-gain low-noise amplifier, which is directly applied to the fields of electronic communication, wireless communication and the like. (2) Background technology [0002] Low noise amplifier is a key component in wireless communication products, usually it can be used in the receiving system of wireless base station, radar receiving system, satellite communication receiving system and other fields. The key parameters of the low noise amplifier are noise figure, intermodulation characteristics, output power and so on. The broadband integrated design of the LNA determines whether it can be flexibly applied to products. At present, the commonly used low-noise amplifier devices are hybrid circuits and module circuits, and the main implementation method is composed of a single transistor and a peripheral matching circuit. Its volume is relatively large, and its working tem...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H03F1/26H03F1/02H03F1/42
Inventor 王国强刘伦才李勇何峥嵘罗璞邓江
Owner NO 24 RES INST OF CETC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products