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Pi type CoSb3 based thermoelectric converting device and method for producing the same

A technology of thermoelectric conversion devices and thermoelectric devices, applied in the manufacture/processing of thermoelectric devices, parts of thermoelectric devices, thermoelectric devices using only Peltier or Seebeck effect, etc., can solve problems such as welding difficulties, achieve simple welding, reduce heat Stress, the effect of achieving thermal matching

Active Publication Date: 2008-03-05
中科西卡思(苏州)科技发展有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The characteristic of the present invention is that suitable electrode Mo-Cu material and high-temperature electrode welding material-near-eutectic Ag-Cu welding sheet are selected, which solves the problem of difficult welding due to the high temperature at the high-temperature end. Plasma spraying a layer of diffusion barrier layer on the thermoelectric block is not only to block the interdiffusion of elements in the thermoelectric material and welding materials, but also to transform the welding problem of metal and semiconductor into the welding problem of metal and metal, making it easier to use SPS welding carried out, the strength of the obtained device welding is also higher

Method used

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  • Pi type CoSb3 based thermoelectric converting device and method for producing the same
  • Pi type CoSb3 based thermoelectric converting device and method for producing the same

Examples

Experimental program
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Effect test

Embodiment 1

[0028]The cut P-type and N-type thermoelectric pins are first subjected to rough grinding on the two end faces, then ultrasonically cleaned in ethanol, and then plasma sprayed on both ends to form a Mo diffusion barrier layer (3) with a thickness of about 30 μm. Put the P-type and N-type thermoelectric pins (4) into a special mold, put the cut Ag-Cu solder piece (2) and Mo-Cu electrode (1) into the mold in turn on the thermoelectric pins, and perform SPS connection , the sintering pressure is 15MPa, the heating rate is 200°C / min, the temperature is kept at 550°C for 30 seconds, and then the temperature is slowly lowered, and the cooling rate is controlled at 100°C / min, and the welding of the high-temperature end electrode is completed. Put the initially formed π-type device on the Mo diffusion barrier layer (3) at the low temperature end and then vacuum sputter a Ni layer (6) with a thickness of about 20 μm to facilitate better soldering, and then use Sn-Pb solder (7) The low-...

Embodiment 2

[0030] Process and plasma spray the thermoelectric pins that have been cut with the same method and conditions as in Example 1, put P-type and N-type thermoelectric pins (4) into special molds, and place the Ag-Cu soldering pieces that have been cut (2) and Mo-Cu electrode (1) are put into the thermoelectric pin in the mold in turn, and SPS connection is carried out. The sintering pressure is 25MPa, the heating rate is 250°C / min, and the temperature is kept at 550°C for 45 seconds, and then the temperature is slowly lowered. The cooling rate Controlled at 150°C / min, the high-temperature terminal electrode welding is completed. Put the initially formed π-type device on the Mo diffusion barrier layer (3) at the low temperature end and then vacuum sputter a Ni layer (6) with a thickness of about 30 μm to facilitate better soldering, and then use Sn-Pb solder (7) The low-temperature end is soldered to the Cu sheet (8) on the ceramic substrate at a temperature of 180°C. The interf...

Embodiment 3

[0032] The cut thermoelectric legs were treated with the same method and conditions as in Example 1, and then plasma sprayed on both ends to form a W diffusion barrier layer (3) with a thickness of about 20 μm. Put the P-type and N-type thermoelectric pins (4) into a special mold, put the cut Ag-Cu solder piece (2) and Mo-Cu electrode (1) into the mold in turn on the thermoelectric pins, and perform SPS connection , the sintering pressure is 15MPa, the heating rate is 250°C / min, the temperature is kept at 550°C for 60 seconds, and then the temperature is slowly lowered, and the cooling rate is controlled at 100°C / min, and the welding of the high-temperature end electrode is completed. Vacuum sputter a Ni layer (6) with a thickness of about 25 μm on the Mo layer of the low-temperature end of the initially formed π-type device to facilitate better soldering, and then use Sn-Pb solder (7) to connect the low-temperature end to the ceramic The Cu chip (8) on the substrate is connec...

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Abstract

This invention relates to a Pa-type CoSb3-base thermoelectric converting device including: a Mo-Cu alloy electrode at an end of high temperature, a welding layer of the high temperature end, a diffusion blocking layer, thermoelectric pins, a metal layer, a welding layer and an electrode of the low temperature end, in which, the thermoelectric pins are made of P or N-type CoSb3-base thermoelectric material and are connected with the Mo-Cu alloy electrode into one unit by the welding layer of the high temperature end to form a high temperature end, the low temperature end of the pins are connected with the electrode of its end by the metal layer and the welding layer of the low temperature end, which utilizes a SPS quick welding technology to realize heat match as much as possible and no obvious crack exists at the high temperature end.

Description

technical field [0001] The invention relates to a π-type CoSb 3 The invention relates to a base thermoelectric conversion device and a preparation method thereof, in particular to a connection process between a cobalt antimonide thermoelectric material and an electrode, and belongs to the technical field of preparation of thermoelectric devices. Background technique [0002] Thermoelectric material is a functional material that directly converts thermal energy and electrical energy into each other. It uses its own Seebeck effect to directly convert thermal energy into electrical energy. With the increasing severity of global environmental pollution and energy crisis, the design and preparation of thermoelectric devices has received more and more attention from all over the world. Refrigeration and power generation devices made of thermoelectric materials are small in size, light in weight, without any mechanical transmission parts, noiseless in operation, and long in servic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/32H01L35/08H01L35/34H10N10/17H10N10/01H10N10/817
Inventor 李小亚赵德刚陈立东夏绪贵柏胜强周燕飞赵雪盈
Owner 中科西卡思(苏州)科技发展有限公司
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