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Fluxing agent growth method for trigallium phosphate crystal

A technology of trigallium phosphate and flux, applied in the directions of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of high equipment requirements, unfavorable industrial production, and large amount of precious metal lining, and achieve fast and easy growth. Simple operation and equipment

Inactive Publication Date: 2008-01-16
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It is difficult to obtain large-sized single crystals by the above-mentioned hydrothermal growth crystals. At the same time, hydrothermal growth requires high temperature and high pressure conditions, a large amount of precious metal lining is used, and high equipment requirements are not conducive to industrial production.

Method used

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  • Fluxing agent growth method for trigallium phosphate crystal
  • Fluxing agent growth method for trigallium phosphate crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] Fig. 1 has provided and adopted the present invention to grow Ga 3 PO 7 Schematic diagram of the structure of the single crystal growth and control device. The device is a vertical resistance wire heating furnace, the seed crystal rod 2 is bound with a seed crystal 8 at the lower end, and its upper end is installed on the rotating device 1 . Insert the seed crystal 8 into the melt 11 and rotate it under the drive of the rotating device 1. The furnace tube 4 is provided with refractory bricks 3, and the resistance wire 5 is wound on the outer wall of the furnace tube 4. The outer layer of the resistance wire 5 is for heat preservation. Material 6. The temperature control equipment is FP21 programmable automatic temperature controller, and the temperature control accuracy in the growth temperature area is 0.1%. The crystal incubator 7 is placed in an alumina crucible 10, which is a platinum crucible of 70×90 mm, which can withstand the working temperature below 1774° C...

Embodiment 2

[0023] Lithium carbonate-molybdenum oxide (Li 2 CO 3 -MoO 3) as a flux, the raw material is 4N gallium oxide (Ga 2 o 3 ) and ammonium dihydrogen phosphate (NH 4 h 2 PO 4 ), the above-mentioned various reagents are strictly weighed according to the weight ratio of ammonium dihydrogen phosphate: gallium oxide: lithium carbonate: molybdenum oxide=1: 2.44: 3.37: 19.74, then adopt the equipment and method described in Example 1 to obtain Centimeter transparent Ga 3 PO 7 single crystal.

Embodiment 3

[0025] Lithium carbonate-molybdenum oxide (Li 2 CO 3 -MoO 3 ) as a flux, the raw material is 4N gallium oxide (Ga 2 o 3 ) and ammonium dihydrogen phosphate (NH 4 h 2 PO 4 ), the above-mentioned various reagents are strictly weighed according to the weight ratio of ammonium dihydrogen phosphate: gallium oxide: lithium carbonate: molybdenum oxide=1: 2.44: 4.37: 25.60, and then adopt the equipment and method described in Example 1 to obtain Centimeter transparent Ga 3 PO 7 single crystal.

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Abstract

The invention provides a flux growth of trigallium phosphate crystal. The method comprises weighing ammonium dihydrogen phosphate, gallium oxide, lithium carbonate and molybdenum oxide at the weight ratio of 1:2.44:(1.96-4.41):(11.45-25.77), mixing thoroughly, placing in a platinum crucible, heating for smelting in a growth furnace, cooling down to a temperature 10-20 DEG C above the saturation point of melt to obtain a mixed fusant composed of Ga3PO7 and flux, introducing a seed crystal into the growth furnace, feeding the seed crystal until the temperature drops to 1-2 DEG C above the saturation point and rotating at a speed of 30 r / min, cooling until the seed crystal begins to melt, taking out the crystals from the melt when the crystal growth stops, cooling down to 200 DEG C at a rate of 20-30 DEG C per hour, and naturally cooling down to room temperature to obtain centimeter-sized Ga3PO7 crystal. The invention has the advantages of simple equipment, rapid growth rate, easy operation, and yield of large-size Ga3PO7 with good optical quality.

Description

technical field [0001] The present invention relates to trigallium phosphate (Ga 3 PO 7 ) method for growing piezoelectric crystals. Background technique [0002] The piezoelectric effect was first discovered by the Curie brothers on α-quartz crystals in 1880, and it reflects the mutual coupling between elastic properties and electrical properties in piezoelectric crystals. Because of the conversion between elastic energy and electrical properties, piezoelectric crystals are widely used in piezoelectric transducers, piezoelectric sensors, electroacoustic and ultrasonic engineering, and become an important class of functional materials. [0003] The piezoelectric crystal must be a crystal without a symmetry center. Among the existing piezoelectric crystals, the 32 and 3m point group crystals of the trigonal system are the most widely studied and applied, and the representative crystal of the 32 point group is α-SiO 2 , α-AlPO 4 and GaPO 4 etc. Representative crystals of ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/14
Inventor 王继扬徐国纲李静张怀金刘宏
Owner SHANDONG UNIV
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