Fin channel dual-bar multi-function field effect transistor and its making method
A field effect transistor and multifunctional technology, which is applied in the field of fin channel double gate multifunctional field effect transistor and its preparation, can solve the problem of affecting the DC characteristics and reliability of the device, long programming/erasing time, and affecting the reliability of the device. and other problems, to achieve the effect of improving programming/erasing speed, improving DC characteristics and reliability, and improving reliability
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[0061] The following describes in detail the fin-channel dual-gate multifunctional field effect transistor provided by the present invention and its preparation method in conjunction with the accompanying drawings, but it does not constitute a limitation to the present invention.
[0062] As shown in Figs. 3(a)-(c), the fin-type channel double-gate multifunctional field effect transistor of this embodiment. The device is based on an SOI substrate. Figure 3(a) shows the layout of the device, M1 is the active area version, and M2 is the gate version. Figures 3(b) and (c) respectively show the cross-sectional structure of the device along the vertical direction of the channel (A1A2 direction) and along the channel direction (B1B2 direction). From the perspective of the cross-sectional structure along the vertical direction of the channel, the field effect transistor is located on the buried silicon dioxide layer 302 of the SOI substrate. The cross section of the channel is a rectangu...
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