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Device and method for high-speed rapid growth of diamond single-crystal

A diamond single crystal, non-diamond technology, applied in the field of diamond single crystal materials and its preparation, to achieve the effects of good heat conduction, easy control and modulation, and easy processing

Inactive Publication Date: 2007-09-19
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved in the present invention is to design a new device and method for high-speed growth of diamond single crystal, which has the advantages of simple method, fast growth speed, low cost, and little pollution, so as to meet and develop electronics, machinery, etc. application

Method used

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  • Device and method for high-speed rapid growth of diamond single-crystal

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Experimental program
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Embodiment 1

[0034] The device for high-speed growth of diamond single crystal of the present invention - the structure of the sample holder is illustrated with reference to the accompanying drawings. In Fig. 1 and Fig. 2, 1 is a polycrystalline diamond film, 2 is an annular frame, and the polycrystalline diamond film 1 and the annular frame 2 constitute a sample holder 5. That is, the sample holder 5 is equipped with a closed annular frame 2 on the polycrystalline diamond film 1. 3 is a diamond powder (particle size is micron or / and nanoscale), and 4 is a seed crystal.

[0035] When in use, the diamond seed crystal 4 can be placed in the hole in the annular frame 2 to directly grow the diamond single crystal. Diamond micropowder 3 can also be placed in the hole in the annular frame 2 of sample support 5, and seed crystal 4 is placed in the hole of annular frame 2, and makes the below of seed crystal 4 and the gap place between seed crystal 4 and annular frame 2 Filled with diamond microp...

Embodiment 2

[0038]The experiment used Seki's ASTex 5250 5kw (2.45GHz) microwave plasma chemical vapor deposition equipment, using high temperature and high pressure type Ib single crystal (100) diamond as the seed crystal, and homoepitaxially grown single crystal diamond on it at a high speed. The upper and lower (100) sides of the diamond seed crystal are mechanically polished, then ultrasonically cleaned in acetone, and finally placed in a specially designed polycrystalline diamond sample holder (see Figure 1), and the sample is placed in the deposition chamber. First pump down the pressure in the deposition chamber to below 0.1Pa. The gases used in the experiment were high-purity methane (4N), hydrogen (5N) and nitrogen (5N). The experiment is divided into two stages of etching and growth. In the etching stage, only hydrogen gas and nitrogen gas were fed, the flow rates were 500 sccm and 1.8 sccm respectively, and the growth surface of the diamond substrate was etched for 3 hours unde...

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Abstract

The inventive apparutus and method for growing diamond monocrystal at high-speed belongas to the technical field of diamond materials. The said apparatus is provided with sample tray 5 on the substrate holder in the settling chamber of chemical vaporous depositon system; sample tray 5 being provided with close annular frame 2 on the multi-crystal diamond film. It can also be provided with diamond powder 3 in the cavern in the close annular frame 2. The inventive method is that, monocrystal diamond crystallon 4 is placed into the settling chamber through the cavern in the close annular frame 2 and is etched in advance by plasma in situ; then diamond monocrystal is grown in the atmosphere of methane, hydrogen and nitrogen. The method includes that possible non-diamond phase and structural cavern are determined to be treated by observing brightness variation of growth face. The inventive apparatus is simple and easy to machine; and it does not bring any pollution for growing monocrystal diamond and has good thermal conduction. Transparent diamond monocrystal can be produced by the inventive method, and the growing speed can be more than 100 mm / hour.

Description

technical field [0001] The invention belongs to the technical field of diamond single crystal material and its preparation, and relates to a device and method for growing diamond single crystal at a high rate by a plasma chemical vapor deposition method. Background technique [0002] In the early 1980s, polycrystalline diamond films were grown on heterogeneous substrates by chemical vapor deposition (CVD). This method has been developed rapidly because of its low cost and the ability to deposit large-area polycrystalline diamond films, and it is technically mature. However, due to the large number of grain boundaries and defects in the polycrystalline film, it cannot meet the requirements of diamond in electronic devices and other aspects; while the growth rate of diamond single crystal grown by homoepitaxial method is relatively slow, generally less than 5-10 microns / hour, the growth A diamond single crystal film with a thickness of millimeters needs to be grown continuous...

Claims

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Application Information

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IPC IPC(8): C30B29/04C30B25/00
Inventor 李红东邹广田吕宪义金曾孙
Owner JILIN UNIV
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