Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Metal inserting layer in hydride gas phase epitaxial growth gallium nitride film and process for preparing the same

A hydride gas phase and epitaxial growth technology, which is applied in the direction of metal material coating process, coating, gaseous chemical plating, etc., can solve the problems of complex process, high cost, metal W insertion layer to reduce defect density, etc. Quality, strong adaptability, effect of reducing dislocation density

Inactive Publication Date: 2009-04-15
DAHOM FUJIAN ILLUMINATION TECH
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, there are many methods to reduce the dislocation density, but they are all similar to the lateral epitaxial overgrowth (ELOG) technology, which requires the use of photolithography and other processes, the process is complicated and the cost is high
So far, there is no report on the use of metal W insertion layer to reduce defect density in HVPE growth GaN

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Metal inserting layer in hydride gas phase epitaxial growth gallium nitride film and process for preparing the same
  • Metal inserting layer in hydride gas phase epitaxial growth gallium nitride film and process for preparing the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] Using MOCVD method in Al 2 o 3 GaN with a thickness of 200 microns is grown on the substrate as a template, and then an 8nm-thick metal W thin layer is deposited on the template by electron beam evaporation at a temperature of 500 ° C, and then the template with the metal layer is placed into the HVPE reaction chamber, in N 2 The atmosphere is heated to 1100° C., annealed for 20 minutes, and then HVPE GaN growth is performed after annealed. The sample measurement results show that the dislocation density of the GaN film grown by this method is 3 to 4 orders of magnitude lower than that of the GaN film grown directly by HVPE method without intercalation layer, which is about 5×10 6 cm -2 Or so, the crystalline quality is higher.

Embodiment 2

[0018] Using the HVPE method to grow GaN on the SiC substrate as a template, and then deposit a thin layer of metal W with a thickness of 80 nm by electron beam evaporation at a temperature of 550 ° C, and then pass the template with a metal insertion layer through H 2 , annealed at 1150 °C for 15 min thick to continue the GaN growth of HVPE. The measurement results of the sample after growth are as in Example 1.

Embodiment 3

[0020] GaN was grown on the Si substrate by MBE method as a template, and the thickness of gallium nitride as a template was 50 microns, and then a 50nm metal W thin layer was deposited on the template by sputtering, and then deposited on N 2 / H 2 GaN growth of HVPE was performed after annealing at 900°C in a mixed gas with a volume ratio of 90 / 10.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a metal plug-in layer in film of GaN and its preparation method by hydrogenide vapour phase denotation, which is characterizes in that it adopts structure of wolfram plug-in layer. In the course of preparing GaN film by HVPE, first film of wolfram is evaporated on GaN mould by electron beam, then film of GaN contimues to grow by HVPE sfter high annealing. The invention is based on the following principles: wolfram film gets aggregated under high temperature, lower GaN contacting with wolfram would get broken up to form separate cellular netted texture and make partial GaN film exposed, and due to the selectivity of HVPE GaN would grow on the lower GaN to connect and form integral GaN film. The invention decreases dislocation density of GaN and is suitable for batch process.

Description

technical field [0001] The invention relates to a metal insertion layer in a gallium nitride (GaN) film grown by a hydride vapor phase epitaxy (HVPE) method and a preparation method. The invention aims at reducing dislocations in epitaxially grown GaN films and improving crystal quality, and belongs to the technical field of material preparation. Background technique [0002] In recent years, HVPE technology has been widely used in the preparation of GaN materials. Due to the high growth rate, simple equipment and low preparation cost of this material growth method, it is a main method for preparing self-supporting GaN substrates. At present, thick-film GaN substrates have been successfully prepared by using this method [R.J.Molnar et al.J.Cryst.Growth, V178, 147, 1997]. Since the current HVPE epitaxial thick film GaN usually uses Al 2 o 3 , GaAs and other substrates, their lattice mismatch and thermal mismatch with GaN materials are relatively large, so there are large ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/34
Inventor 雷本亮于广辉齐鸣叶好华孟胜李爱珍
Owner DAHOM FUJIAN ILLUMINATION TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com