Method for detecting defect of doped boron-silicon glass film

Abstract

A method for detecting the defect of glass membrane mixed with borosilicate is provided, whose process is: depositing the glass membrane mixed with borosilicate on the control wafer; forming the polysilicon film on the said glass membrane mixed with borosilicate on the control wafer; detecting the surface of the control wafer. The invention greatly shortens the detecting period of the glass membrane mixed with borosilicate and improves the yield of the wafer.

Description

technical field [0001] The invention relates to a method for detecting defects of a borosilicate glass film, which belongs to the technical field of semiconductors. Background technique [0002] In most manufacturing processes of semiconductor devices, a chemical vapor deposition (Chemical Vapor Deposition, CVD) system is usually used to form a thin film on the surface of a substrate. For example, in the manufacturing process of semiconductor devices such as transistors, capacitors and DRAM (Dynamic Random-Access Memory, DRAM), a doped layer, a dielectric layer and a protective layer are formed on a semiconductor wafer (Wafer). [0003] In the chemical vapor deposition process, one or more reactive gases are introduced into the reactive gas chamber, and the rate of adding the reactive gases is properly controlled. Thus, a variety of deposited layers required to define a semiconductor component can be provided. Boron Silicon Glass (BSG) film is generally used as a dielectri...

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Problems solved by technology

[0008] The problem solved by the present invention is that when the defects on the surface of the borosilicate glass film layer are detected in the prior art, a large number of wafers containing surface defects have been produced, resulting in a greatly reduced product yield and the problem that the detection period of the prior art is too long

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