Seal ring structure for radio frequency integrated circuits
a technology of integrated circuits and sealing rings, applied in the direction of semiconductor devices, semiconductor/solid-state device details, electrical devices, etc., can solve the problems of signal distortion, unwanted signal interference at one time, etc., to reduce cross coupling between circuits and pads, prevent cross coupling, and reduce unwanted signal coupling
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[0017]The present invention uses a method where a seal ring is formed by stacking interconnected conducting layers along the perimeter of the integrated circuit (IC). The embodiment provided herein describes a method of creating the seal ring and connecting the seal ring to the deep N-well.
[0018]Refer to FIG. 3, depicting in cross-section a portion of an integrated circuit die where the seal ring is formed. A substrate 30 is provided. The substrate layer 30 may contain underlying layers, devices, junctions, and other features (not shown) formed during prior process steps. The cut line 31 represents the outer edge of the IC die of interest. During subsequent processing, the die would be separated from an adjacent IC die (not shown) on the substrate 30 along that cut line 31. A deep N-well region 32 is formed as is conventional in the art. A p+source / drain (S / D) region 34 formed by conventional techniques is isolated from the remainder of the underlying circuitry (not shown) by shallo...
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