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Single-cystalline aluminum nitride substrate and a manufacturing method thereof

a technology of aluminum nitride and single crystallization, which is applied in the direction of polycrystalline material growth, crystal growth process, chemically reactive gas, etc., can solve the problems of inability to completely eliminate contamination and defects with the present technique, and achieve superior crystallinity, good crystallinity, and good crystallinity

Active Publication Date: 2017-06-27
NAT UNIV CORP TOKYO UNIV OF AGRI & TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The invention relates to a method for manufacturing high-quality single-crystalline AlN with good crystallographic quality. The method involves controlling the growth temperature and the concentrations of carbon and chlorine in the gas mixture used for the epitaxy process. The resulting single-crystalline AlN has a low crystal growth temperature and is easy to achieve. The method also allows for the observation of a peak in the AlN's crystal structure, indicating good crystallographic quality. The invention also provides a method for controlling the carbon and chlorine concentrations in the gas mixture to achieve the desired crystallographic quality. The use of a single-crystalline AlN substrate with good crystallographic quality further improves the quality of the resulting single-crystalline AlN.

Problems solved by technology

However, even if the concentration of total impurities was extremely decreased as shown in Japanese Laid-Open Patent Publication No. 2009-078971, raising the transparency with respect to a light having 300 nm or less wavelength has not succeeded.
An ideal single crystal, which completely does not include impurity (a total impurity amount is zero) and has no defects, is considered to show a light transparency close to a theoretical value; however, it is impossible with the present technique to completely eliminate contamination and defects thereof.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

example 1

[0061](Preparation of a Substrate)

[0062]In the present invention, a composite AlN freestanding substrate was manufactured as a substrate according to the method described in WO2009 / 090821. In this composite AlN freestanding substrate, a thickness of single-crystalline AlN thin-film layer, constituting single-crystalline AlN surface, was 230 nm and a thickness of AlN non-single-crystalline layer (poly-crystalline AlN layer) underneath the single-crystalline AlN thin-film layer was 350 μm.

[0063]The composite AlN freestanding substrate was washed for 3 min. with supersonic wave of 100 kHz frequency in acetone, and then washed for 3 min. with supersonic wave of 100 kHz frequency in 2-propanol. Subsequently, the substrate was rinsed with ultrapure water, and blew with dry nitrogen to remove the ultrapure water.

[0064](Manufacturing the Single-crystalline AlN of the Invention)

[0065]In HVPE apparatus used in the present example, a part which generates gas including carbon atom by a reductio...

example 2

[0073]Single-crystalline AlN layer was grown by the same procedure with Example 1, except using a tungsten screw for fixing a suceptor of HVPE apparatus and a rotating shaft, and setting a temperature when growing single-crystalline AlN layer of the invention to 1350° C.

[0074]By performing a mirror surface polish on both sides, a sample having 200 μm thickness made only by the grown single-crystalline AlN layer was manufactured; and a linear transparency at 265 nm, a concentration of impurity, a full width at half maximum of an X-ray rocking curve for (0002) plane, an X-ray diffraction profile of θ-2θ mode and photoluminescence spectrum were measured by the same method with Example 1. As a result, the linear transparency was 58% and the absorption number was calculated to 27 cm−1. The concentration of carbon atom was 3×1016 cm−3 and the concentration of oxygen atom was 5×1017 cm−3. Further, chlorine atom concentration was 5×1015 cm−3, a total concentration of carbon, chlorine, boron...

example 3

[0076]Single-crystalline AlN layer was grown by the same procedure with Example 1, except using TaC made screw for fixing the suceptor of HVPE apparatus and a rotating shaft, and setting a temperature when growing single-crystalline AlN layer of the invention to 1250° C.

[0077]By performing a mirror surface polish on both sides, a sample having 200 μm thickness made only by the grown single-crystalline AlN layer was manufactured; and the linear transparency at 265 nm, the concentration of impurity, the full width at half maximum of an X-ray rocking curve for (0002) plane, the X-ray diffraction profile of θ-2θ mode and the photoluminescence spectrum were measured by the same method with Example 1. As a result, the linear transparency was 45% and the absorption number was calculated to 40 cm−1. The concentration of carbon atom was 3×1016 cm−3 and the concentration of oxygen atom was 1×1017 cm−3. Further, the chlorine atom concentration was 7×1014 cm−3, the total concentration of carbon...

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Abstract

The present invention relates to a single-crystalline aluminum nitride wherein a carbon concentration is 1×1014 atoms / cm3 or more and less than 3×1017 atoms / cm3, a chlorine concentration is 1×1014 to 1×1017 atoms / cm3, and an absorption coefficient at 265 nm wavelength is 40 cm−1 or less.

Description

[0001]This application is a U.S. national stage application of PCT / JP2011 / 079838 filed on 22 Dec. 2011, the entireties of which are incorporated herein by reference.TECHNICAL FIELD[0002]The present invention relates to a novel single-crystalline aluminum nitride (hereinafter, sometimes referred to as AlN) and a manufacturing method thereof. In particular, it relates to a novel single-crystalline AlN, wherein a concentration of carbon atom included in said single-crystalline AlN is low and an ultraviolet light transparency is excellent, and to a manufacturing method thereof.BACKGOUND OF THE INVENTION[0003]In order to form a semiconductor device such as an ultraviolet light emitting device, it is required to form a laminated structure including a clad layer, an active layer and the like between n-semiconductor layer electrically connected to n-electrode and p-semiconductor layer electrically connected to p-electrode; and in view of a emission efficiency, it is important that all layer...

Claims

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Application Information

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Patent Type & Authority Patents(United States)
IPC IPC(8): C30B25/02H01L33/00C30B29/40H01L21/02C30B25/08H01L33/34C30B23/00
CPCH01L33/343C30B25/02C30B25/08C30B29/403H01L21/0254H01L33/0054C30B23/00
Inventor KOUKITU, AKINORIKUMAGAI, YOSHINAONAGASHIMA, TORUHIRAREN, YUKI
Owner NAT UNIV CORP TOKYO UNIV OF AGRI & TECH
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