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Flux-free chip to wafer joint serial thermal processor arrangement

a thermal processor and chip technology, applied in the field of electronic chips, can solve the problems of reducing the reliability of the device produced, the inability to perfectly clean the die and the wafer, and the removal of flux, so as to reduce the surface oxides of lead, tin, copper and silver. the effect of reducing the voids

Inactive Publication Date: 2012-08-28
SEMLGEAR INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0028]The reflowing of high lead, eutectic and lead free solders are completed with one treatment of formic acid, wherein that wafer configuration is treated by the introduction of formic acid into the chambers at certain stations at atmospheric pressure. Removal or minimizing the voids inside the solder during the solder reflow by the application of a vacuum occurs after the surface oxides have been reduced and the solder has been melted.
[0029]Solder reflow is important in the semiconductor manufacturing process. Such reflow accomplishes the reduction of surface oxides on the solder bumps or balls. It helps form the inter-metallic layer, it removes or minimizes the voids within the solder bumps or balls, the process forms solder compounds, and it permits the performing of shiny and spherical solder bumps or balls on the semiconductor wafer material.
[0030]The present invention however, requires only one chemical, such as a formic acid, to effectively reduce the surface oxides of lead, tin, copper and silver. The formic acid may also be utilized to reduce surface oxides of high lead solders such as lead and tin compounds, eutectic solders, and lead free solder as well as silver, tin or silver and copper compounds.
[0031]By using a stepped, independent, multi-chamber rotary machine such as utilized with the present invention, removal of moisture on the surface can be easily accomplished. Removal of surface oxides or the minimization of voids inside the solder bumps or balls may be accomplished. The forming of inter-metallic layer and a shiny smooth solder bump or ball is thus permitted in a multi-station rotating machine as of the present invention. By applying formic acid under atmospheric pressure, a large amount of formic acid molecules are thus available for the oxide reduction process.
[0032]By also applying the formic acid under atmospheric pressure, mechanical system for delivery of the chemical is easy and controllable. Because of the pressure utilized, the heating system is able to permit uniformed and controlled heating of a wafer or semiconductor assembly thereon. Under atmospheric pressure, the transferring of heat away from the healing system to the solder is more efficient. This is especially true because the wafer size in modem semiconductor manufacturing is much larger and the system requirements are much higher.
[0033]The formation of solder bumps or balls are formed in a improved manner when it is done so under atmospheric pressure because the conduction by heating or cooling can be accomplished more efficiently. The initial heating and cooling of solder bumps or balls at atmospheric pressure and subsequent heating and applying of a vacuum at elevated temperatures permits the pressure inside of the voids to draw those voids to the surface. Such voids are then easily removed.

Problems solved by technology

Removal of that flux is one of the problems common to the prior art.
The flux in between the die and the wafer is impossible to perfectly clean, thereby reducing the reliability of the device produced.
Due to the nature of fluxes utilized in the prior art, they adhere to the processing equipment and make that equipment very difficult to be cleaned.
The use of fluxes requires a lot of chemical consumption and a lot of maintenance for the manufacturing process.
By using a vacuum system for solder reflow, there are several disadvantages, such as the lack of heat transfer media.

Method used

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  • Flux-free chip to wafer joint serial thermal processor arrangement
  • Flux-free chip to wafer joint serial thermal processor arrangement
  • Flux-free chip to wafer joint serial thermal processor arrangement

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Embodiment Construction

[0047]The invention a an electronic chip and chip manufacturing process which comprises a rotatable, circumferentially organized, serial thermal processing station arrangement 10 using a method for serially treating a pre-assembled chip or die and a wafer assembly “W” through a series of preferably at least six independent, enclosed station chambers in the processor arrangement 10, as represented in FIG. 1.

[0048]The rotary production station arrangement 10 is arranged to rotate so as to present a material to be treated, such as a semiconductor wafer, at a series of circumferentially spaced-apart locations, from a Load / Lock station to processing stations numbered 1 through 5, which stations each are arranged to independently control the temperature, pressure and atmosphere thereat, as is similarly represented in various aspects and embodiments of the arrangement 10, in a mechanism as may be shown in the above-identified '789 and '879 patents, incorporated by reference herein.

[0049]Th...

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Abstract

A serial thermal processing arrangement for treating a pre-assembled chip / wafer assembly of semiconductor material in a rotary processor, through a series of intermittent, rotatively advanced, movements into independent, temperature and pressure controlled, circumferentially disposed chambers.

Description

BACKGROUND OF THE INVENTIONField of the Invention[0001]The present invention relates to an electronic chip and to a method of manufacturing same such as semiconductor wafers and more particularly to a stepwise process of a machine utilized in that manufacture of semiconductor wafers and is a continuation-in-part application of co-pending U.S. patent application Ser. No. 12 / 930,462 (Semigear-22) filed concurrently herewith, and wherein the present application claims the benefit of and is a CIP of Ser. No. 12 / 653,454, filed Dec. 14, 2009 now U.S. Pat. No. 7,982,320, which is a division of Ser. No. 11 / 482,838, filed Jul. 7, 2006, now U.S. Pat. No. 7,632,750, which is a CIP of Ser. No. 10 / 832,782, filed Apr. 27, 2004, now U.S. Pat. No. 7,008,879, which is a division of Ser. No. 10 / 186,823, filed Jul. 1, 2002, now U.S. Pat. No. 6,827,789, each incorporated herein by reference in the present Application.DESCRIPTION OF THE PRIOR ART[0002]Formation of a solder bump on a semiconductor substr...

Claims

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Application Information

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Patent Type & Authority Patents(United States)
IPC IPC(8): H01L21/44
CPCB23K3/0623H01L24/11H01L24/742H01L24/75H01L24/81H01L24/83H01L24/92H01L21/68764H01L21/68771B23K2201/40H01L2224/16H01L2924/01027H01L2924/01029H01L2924/01047H01L2924/01074H01L2924/01075H01L2924/01078H01L2924/01082H01L2924/14H01L2924/01006H01L2924/01023H01L2924/01322H01L2924/014H01L2224/83948H01L2224/75102H01L2224/755H01L2224/81948H01L2224/758H01L2224/131H01L2224/291H01L2224/73203H01L2224/7565H01L2224/81065H01L2224/81193H01L2224/8121H01L2224/81815H01L2224/81986H01L2224/83065H01L2224/8309H01L2224/83193H01L2224/8321H01L2224/83815H01L2224/83986H01L2224/9205H01L2224/92125H01L2224/8109H01L2224/7501H01L21/67098H01L2224/1131H01L2224/10135H01L2224/10165H01L2924/00013H01L2224/81141H01L2224/11334H01L2224/13099H01L2224/13599H01L2224/05599H01L2224/05099H01L2224/29099H01L2224/29599B23K2101/40H01L2224/81205
Inventor ZHANG, JIAN
Owner SEMLGEAR INC
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