Inductively Coupled Plasma Source with Multiple Dielectric Windows and Window Supporting Structure

a dielectric window and inductive coupling technology, applied in plasma technology, gas-gas reaction process, vacuum evaporation coating, etc., can solve the problems of insufficient approach and difficulty in achieving uniformity

Inactive Publication Date: 2017-12-07
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The patent describes a plasma reactor with a unique design that allows for improved processing. The reactor includes a metallic portion and a dielectric window, with a concentric arrangement of coil antennas and a cylindrical dielectric window. The reactor also includes a center gas disperser and a top gas plate with gas injection orifices and a first and second heater layer. The reactor can also include a cylindrical shield and a top fan plenum, as well as plural intake and exhaust fans. The patent also describes the use of a side air flow passage and the placement of temperature sensors at the dielectric windows. The technical effects of the reactor design include improved plasma processing, improved gas flow control, and improved heating and cooling capabilities.

Problems solved by technology

Such uniformity is becoming more difficult to achieve, as substrate size is increasing and device geometry is shrinking.
As workpiece diameter and chamber diameter increase, we have found this approach is not adequate, as the larger size increases the difficultly of attaining the requisite process uniformity.

Method used

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  • Inductively Coupled Plasma Source with Multiple Dielectric Windows and Window Supporting Structure
  • Inductively Coupled Plasma Source with Multiple Dielectric Windows and Window Supporting Structure
  • Inductively Coupled Plasma Source with Multiple Dielectric Windows and Window Supporting Structure

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Embodiment Construction

[0046]A plasma reactor 10 depicted in FIG. 1 includes an upper portion 20 depicted in the enlarged view of FIG. 1A and a lower portion 30 depicted in the enlarged view of FIG. 1B. Referring to FIGS. 1, 1A and 1B, the plasma reactor 10 includes a plasma processing chamber 100 having a side wall 105 and a lid assembly 110. The side wall 105 has an axially symmetrical shape, such as a cylinder. The side wall 105 includes an axially symmetrical (e.g., cylindrical) dielectric side window 106 and a chamber liner 107, which may be formed of metal. A workpiece support 115 inside the chamber 100 includes a pedestal 120 having a workpiece support surface 121 facing the lid assembly 110 for holding a workpiece 122, and a post 125 supporting the pedestal 120. A processing region 101 of the chamber 100 is confined by the lid assembly 110, the pedestal 120 and the side wall 105. The pedestal 120 may include an insulated internal electrode 130. Optionally, an electrostatic chucking (ESC) voltage a...

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PUM

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Abstract

A plasma reactor enclosure has a metallic portion and a dielectric portion of plural dielectric windows supported on the metallic portion, each of the dielectric windows extending around an axis of symmetry. Plural concentric coil antennas are disposed on an external side of the enclosure, respective ones of the coil antennas facing respective ones of the dielectric windows.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]This application is a continuation of U.S. application Serial No. 13 / 666,280, filed Nov. 1, 2012, which claims the benefit of U.S. Provisional Application Serial No. 61 / 673,937, filed Jul. 20, 2012, the disclosures of which are incorporated by reference.BACKGROUNDField[0002]Embodiments of the present invention are generally concerned with a plasma processing reactor chamber for processing workpieces, in which plasma is generated by inductive coupling of RF power to process gases inside the chamber.Description of the Related Art[0003]Electronic devices such as integrated circuits, flat panel displays and the like, are fabricated by a series of processes, in which thin film layers are deposited on substrates and etched into desired patterns. The process steps may include plasma-enhanced reactive ion etching (RIE), plasma-enhanced chemical vapor deposition (CVD), plasma-enhanced physical vapor deposition (PVD).[0004]Uniform distribution of et...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): C23F1/08C23C14/28B01J12/00H05H1/46H01J37/32
CPCH01J37/32834H01J37/32733H01J37/3211B01J12/002H05H1/46C23C14/28C23F1/08H01J37/321H01J37/3244
Inventor NGUYEN, ANDREWCOLLINS, KENNETH S.RAMASWAMY, KARTIKRAUF, SHAHIDCARDUCCI, JAMES D.BUCHBERGER, DOUGLAS A.AGARWAL, ANKURKENNEY, JASON A.DORF, LEONIDBALAKRISHNA, AJITFOVELL, RICHARD
Owner APPLIED MATERIALS INC
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