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Method for producing polymer

a polymer and polymer technology, applied in the field of polymer production, can solve the problems of expected resolution performance not being obtainable, and onium salt decomposition also occurring, so as to inhibit the concomitant deprotection reaction and minimize the roughness of the edge

Active Publication Date: 2017-04-06
SHIN ETSU CHEM IND CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The invention is a new type of polymer that can be used in the manufacturing of semiconductor circuits and other electronic devices. This polymer is special because it can resist changes in pH and other chemicals used in the manufacturing process. This resistance helps to create smoother and more precise patterns on the surface of the materials being manufactured. This polymer can be used in a variety of manufacturing processes, such as lithography and the formation of mask circuit patterns.

Problems solved by technology

When a polymer having undergone elimination of the acid labile group is used as a positive tone resist material, the expected resolution performance is not obtainable.
When a polymer having undergone crosslinking reaction is used as a negative tone resist material, the expected resolution performance is not obtainable.
However, there is a possibility that decomposition of the onium salt also occurs by heat, and / or a trace of acid is present in the onium salt as an impurity.
However, a resist composition comprising the polymer obtained from this method lacks long-term storage stability.
However, when recurring units having lactone are copolymerized, there is a possibility that the lactone is decomposed with the basic compound.

Method used

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  • Method for producing polymer
  • Method for producing polymer
  • Method for producing polymer

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0109]Under illumination of Tino4000NY, a 2-L flask was charged with 8.2 g of 3-ethyl-3-exo-tetracyclo[4.4.0.12,5. 17,10]-dodecanyl methacrylate, 3.6 g of 4-hydroxyphenyl methacrylate, 9.0 g of 3-oxo-2,7-dioxatricyclo[4.2.1.04,8]nonan-9-yl methacrylate, 5.6 g of PAG Monomer 1, 0.1 g of 1-(t-pentyloxycarbonyl)-4-morpholine, and 40 g of tetrahydrofuran (THF) as solvent. Under nitrogen atmosphere, the reactor was cooled to −70° C., after which vacuum pumping and nitrogen blow were repeated three times. The reactor was warmed up to room temperature, whereupon 1.2 g of 2,2′-azobisisobutyronitrile (AIBN) was added as polymerization initiator. The reactor was heated at 60° C., whereupon reaction run for 15 hours. The reaction solution was poured into 1 L of isopropyl alcohol for precipitation. The resulting white solid was filtered and vacuum dried at 60° C., obtaining a white polymer designated Polymer 1. The polymer was analyzed by 13C-NMR and 1H-NMR spectroscopy and GPC, with the result...

example 2

[0113]Under illumination of Tino4000NY, a 2-L flask was charged with 9.8 g of 3-isopropyl-3-cyclopentyl methacrylate, 9.9 g of β-methacryloxy-β,γ-dimethyl-γ-butyrolactone, 3.7 g of PAG Monomer 2, 0.1 g of 1-(t-butoxycarbonyl)-4-piperidinone, and 40 g of THF solvent. Under nitrogen atmosphere, the reactor was cooled to −70° C., after which vacuum pumping and nitrogen blow were repeated three times. The reactor was warmed up to room temperature, whereupon 1.2 g of AIBN was added as polymerization initiator. The reactor was heated at 60° C., whereupon reaction run for 15 hours. The reaction solution was poured into 1 L of isopropyl alcohol for precipitation. The resulting white solid was filtered and vacuum dried at 60° C., obtaining a white polymer designated Polymer 2. The polymer was analyzed by 13C-NMR and 1H-NMR spectroscopy and GPC, with the results shown below.

Copolymer Compositional Ratio (Molar Ratio)

[0114]3-isopropyl-3-cyclopentyl methacrylate:β-methacryloxy-β,γ-dimethyl-γ-bu...

example 3

[0117]Under illumination of Tino4000NY, a 2-L flask was charged with 10.5 g of 3-t-butyl-3-cyclopentyl methacrylate, 2.5 g of 3-hydroxy-1-adamantyl methacrylate, 6.1 g of tetrahydro-2-oxofuran-3-yl methacrylate, 3.9 g of PAG Monomer 4, 0.5 g of 1-(t-butoxycarbonyl)-2-piperidone, and 40 g of THF solvent. Under nitrogen atmosphere, the reactor was cooled to −70° C., after which vacuum pumping and nitrogen blow were repeated three times. The reactor was warmed up to room temperature, whereupon 1.2 g of AIBN was added as polymerization initiator. The reactor was heated at 60° C., whereupon reaction run for 15 hours. The reaction solution was poured into 1 L of isopropyl alcohol for precipitation. The resulting white solid was filtered and vacuum dried at 60° C., obtaining a white polymer designated Polymer 3. The polymer was analyzed by 13C-NMR and 1H-NMR spectroscopy and GPC, with the results shown below.

Copolymer Compositional Ratio (Molar Ratio)

[0118]3-t-butyl-3-cyclopentyl methacryl...

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Abstract

A polymer comprising recurring units having an acid generator bound to the backbone, and recurring units having an optionally acid labile group-substituted carboxyl group and / or recurring units having an optionally acid labile group-substituted hydroxyl group is obtained by polymerizing corresponding monomers in a solution of a non-polymerizable compound containing a nitrogen atom to which an acid labile group is bound. This prevents deprotection reaction of the acid labile group in the case of positive resist-forming polymer or crosslinking reaction in the case of negative resist-forming polymer.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]This application is a continuation-in-part of copending application Ser. No. 15 / 015,554 filed on Feb. 4, 2016, which claims priority under 35 U.S.C. §119(a) on Patent Application No. 2015-021331 filed in Japan on Feb. 5, 2015, the entire contents of which are hereby incorporated by reference.TECHNICAL FIELD[0002]This invention relates to a method for producing a polymer, especially a polymer having an acid generator bound to its backbone.BACKGROUND ART[0003]To meet the demand for higher integration density and operating speed of LSIs, the effort to reduce the pattern rule is in rapid progress. The wide-spreading flash memory market and the demand for increased storage capacities drive forward the miniaturization technology. As the advanced miniaturization technology, manufacturing of microelectronic devices at the 65-nm node by the ArF lithography has been implemented in a mass scale. Manufacturing of 45-nm node devices by the next generat...

Claims

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Application Information

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IPC IPC(8): G03F7/039G03F7/004G03F7/16G03F7/32C08F220/18G03F7/20G03F7/38C08F220/28G03F7/11
CPCG03F7/0397C08F220/28G03F7/0045G03F7/16G03F7/11C08F220/18G03F7/162G03F7/168G03F7/2004G03F7/38G03F7/325C08F2220/282C08F2220/1833C08F2220/281C08F228/02G03F7/0046G03F7/0382C08F220/283C08F220/1807C08F220/1818C08F220/1808C08F220/281C08F220/282
Inventor HATAKEYAMA, JUNADACHI, TEPPEIFUNATSU, KENJI
Owner SHIN ETSU CHEM IND CO LTD
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