Plasma processing apparatus and plasma processing method

a technology of plasma processing and processing apparatus, which is applied in the direction of water supply installation, transportation and packaging, service pipe system, etc., can solve the problems of severe requirements for plasma processing stability, and achieve the effect of conducting the control of temperature condition more accurately

Inactive Publication Date: 2012-08-02
SHIBAURA MECHATRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0014]According to the invention, there is provided a plasma processing apparatus and a plasma processing method, which can conduct the control of temperature condition more accurately.

Problems solved by technology

Meanwhile, in recent years, the requirement for the stability of plasma processing has become severer than ever.

Method used

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  • Plasma processing apparatus and plasma processing method
  • Plasma processing apparatus and plasma processing method
  • Plasma processing apparatus and plasma processing method

Examples

Experimental program
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first embodiment

[0020]FIG. 1 is a schematic cross-sectional view for illustrating a plasma processing apparatus according to the invention.

[0021]The plasma processing apparatus 1 illustrated in FIG. 1 is a microwave-excitation type plasma processing apparatus, normally referred to as the “Chemical Dry Etching, (CDE) apparatus”. That is, the plasma processing apparatus 1 is an example of plasma processing apparatus which produces plasma products from the process gas through the use of plasma being exited and generated by microwave, and which performs the processing on an object to be processed.

[0022]As shown in FIG. 1, the plasma processing apparatus 1 includes a plasma-generating part 2, a depressurizing part 3, a gas-supplying part 4, a microwave-generating part 5, a processing vessel 6, a temperature-detecting part 7, a controlling part 8, and the like.

[0023]The plasma-generating part 2 is provided with a discharge tube 9 and an introduction waveguide 10.

[0024]The discharge tube 9 has a region ge...

second embodiment

[0065]FIG. 2 is a schematic cross-sectional view for illustrating a plasma processing apparatus according to the invention.

[0066]FIG. 3 is A-A cross-sectional view of FIG. 2.

[0067]The plasma processing apparatus 30 illustrated in FIG. 2 is a microwave-excitation type plasma processing apparatus, normally called the “surface wave plasma (SWP) apparatus”. That is, the apparatus shown in FIG. 2 is an example of plasma processing apparatus which uses the plasma being excited and generated by microwave to produce the plasma products from the process gas, thus conducting the processing of the object to be processed.

[0068]As shown in FIG. 2, the plasma processing apparatus 30 includes a plasma-generating part 31, the depressurizing part 3, the gas-supplying part 4, the microwave-generating part 5, a processing vessel 32, the temperature-detecting part 7, a controlling part 33, and the like.

[0069]The plasma-generating part 31 generates the plasma P by supplying microwave (electromagnetic en...

third embodiment

[0107]FIG. 4 is a schematic cross-sectional view for illustrating a plasma processing apparatus according to the invention.

[0108]The plasma processing apparatus 40 illustrated in FIG. 4 is a capacitively coupled plasma (CCP) processing apparatus, normally called the “parallel-plate type reactive ion etching (RIE) apparatus”. That is, the apparatus shown in FIG. 4 is an example of plasma processing apparatus which uses the plasma generated by applying a high frequency power to the parallel plate electrodes to produce the plasma products from the process gas G, thus performing the processing on the object to be processed.

[0109]As shown in FIG. 4, the plasma processing apparatus 40 is provided with a plasma-generating part 43, the depressurizing part 3, the gas-supplying part 4, a power source part 44, a processing vessel 42, a temperature-detecting part 47, a controlling part 41, and the like.

[0110]The processing vessel 42 is in an approximately cylindrical shape closed at both ends, ...

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Abstract

A plasma processing apparatus includes a processing vessel, a depressurizing part, a placing part, a discharge tube, an introduction waveguide, a gas-supplying part, a transport tube, and a first temperature-detecting part. The processing vessel is able to maintain an atmosphere. The depressurizing part reduces the internal pressure of the processing vessel. The placing part places an object to be processed. The discharge tube has a region generating plasma therein and being provided at a position separated from the processing vessel. The introduction waveguide causes microwave emitted from a microwave-generating part to propagate therethrough to introduce the microwave into the region generating the plasma. The gas-supplying part supplies a process gas to the region generating the plasma. The transport tube communicates the discharge tube with the processing vessel. The first temperature-detecting part detects temperature of the discharge tube.

Description

TECHNICAL FIELD[0001]The invention relates to a plasma processing apparatus and a processing method.BACKGROUND ART[0002]Plasma-utilizing dry process has actively been used in wide technical fields including the manufacture of semiconductor devices, surface hardening of metal parts, surface activation of plastic parts, and chemical-free sterilization. The manufacture of semiconductor devices and liquid crystal displays, for example, adopts varieties of plasma processing such as ashing treatment, etching processing, thin-film deposition (film-forming) processing, and surface modification treatment. The plasma-utilizing dry process is advantageous in terms of low cost, high processing speed, and decreasing environmental pollution because of not using chemicals.[0003]According to that type of plasma processing, the generated plasma excites and activates the process gas to produce plasma products such as neutral active species and ions. Neutral active species and ions thus generated perf...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): E03B7/07
CPCH01J37/32192H01J37/32357H05H2001/4622H01J37/32449H05H1/46H01J37/3244Y10T137/0318Y10T137/8158H05H1/4622
Inventor MATSUSHIMA, DAISUKE
Owner SHIBAURA MECHATRONICS CORP
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