Method for fabricating semiconductor device

Abstract

An object is to provide a technology capable of improving a manufacturing yield of semiconductor devices by preventing scattering of irregular-shaped scraps formed at the time of dicing. To achieve the above object, for dicing lines, by which an irregular-shaped outer periphery may possibly be cut off, among a plurality of dicing lines, formation of the dicing lines starts from an outside of a semiconductor wafer, and after the semiconductor wafer is cut off partway, formation of the dicing lines is ended before reaching the irregular-shaped outer periphery formed on a outer periphery of the semiconductor wafer. For other dicing lines, formation of the dicing lines starts from the outside of the semiconductor wafer, and after the semiconductor wafer is cut off, is ended outside the semiconductor wafer.

Description

TECHNICAL FIELD[0001]The present invention relates to a technology of manufacturing semiconductor devices, and more particularly, to a technology effective in being applied to a dicing process for singulating a semiconductor wafer into a plurality of semiconductor chips.BACKGROUND ART[0002]Japanese Patent Application Laid-open Publication No. 9-1542 (Patent Document 1) discloses a technology in which, in a cutting process for cutting a thin-plate material such as a semiconductor wafer into a plurality of members with a specified dimension, damages of a blade and the thin-plate material which are caused when scraps existing on a periphery of the thin-plate material are scattered and hit the blade and the thin-plate material are avoided. Specifically, a cutting stroke (cutting area) along the semiconductor wafer is set to be shorter than the entire length of a scribe-line, thereby leaving an uncut part on the periphery of the semiconductor wafer.[0003]Japanese Patent Application Laid-...

AI Technical Summary

Benefits of technology

[0011]However, a size of the semiconductor chips to be singulated from the semiconductor wafer has become smaller. Accordingly, intervals between the dicing lines formed on the semiconductor wafer have become narrower. For this reason, a size of the scraps formed by dicing becomes smaller. Particularly, a semiconductor chip for use as a driver of a liquid-crystal display device has, for example, the rectangular shape, and the intervals between the dicing lines formed in a short-side direction of the rectangle becomes narrower.

[0013]An object of the present invention is to provide a technology capable of improving the manufacturing yield of the semiconductor devices by preventing scattering of irregular-shaped scraps formed at the time of dicing.

[0018]Since the dicing lines are formed so as not to cut out the irregular-shaped scraps formed on the outer periphery of the semiconductor wafer, the scraps are prevented from being cut out from the semiconductor wafer. Therefore, since there is no case where the conforming chips are damaged because the scraps are cut out and scattered over the conforming chips of the semiconductor, the manufacturing yield of the semiconductor devices can be improved.

Problems solved by technology

However, a size of the semiconductor chips to be singulated from the semiconductor wafer has become smaller.

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