Reducing nitrogen concentration with in-situ steam generation

Abstract

In-situ steam generation (ISSG) is used to reduce the nitrogen concentration in silicon and silicon oxide areas.

Description

CROSS REFERENCE TO RELATED APPLICATIONS [0001] The present application is a division of U.S. patent application Ser. No. 11 / 365,013 filed on Mar. 1, 2006, incorporated herein by reference.BACKGROUND OF THE INVENTION [0002] The present invention relates to fabrication of integrated circuits, and more particularly to use of in-situ steam generation (ISSG) to form silicon oxide on regions containing silicon and / or silicon oxide and also containing nitrogen. [0003] Nitrogen has been introduced into MOS transistors' gate dielectrics formed of silicon dioxide because nitrogen impedes boron and phosphorus diffusing between the transistor's gate and the channel and source / drain regions. See e.g. U.S. patent application published as no. 2001 / 0003381 on Jun. 14, 2001, filed by Orlowski et al., incorporated herein by reference. The nitrogen presence is not always desirable, however, because nitrogen can cause degradation of the transistor's performance (due to an increased oxide charge for exa...

AI Technical Summary

Benefits of technology

[0005] The inventor has discovered that when silicon oxide is grown on a silicon region containing nitrogen by in-situ steam generation (ISSG), the nitrogen concentration can be reduced and predictable silicon oxide thickness can be provided. Moreover, the silicon oxide thickness is not highly dependent on the initial nitrogen concentration. Therefore, in some embodiments, ISSG makes it unnecessary to mask the peripheral areas or to etch away the silicon portion contaminated with nitrogen.

[0007] It is believed that the nitrogen removal can be enhanced by adding diluent gasses (e.g. argon) in the ISSG process.

Problems solved by technology

The nitrogen presence is not always desirable, however, because nitrogen can cause degradation of the transistor's performance (due to an increased oxide charge for example).

When the peripheral areas are later oxidized to form the gate oxide for the peripheral transistors, the nitrogen slows down the oxidation process and also makes the peripheral gate oxide thickness unpredictable.

In addition, the nitrogen undesirably reduces the peripheral transistors' breakdown voltages.

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