Semiconductor device and fabrication method thereof

Abstract

A semiconductor device fabrication method comprises the steps of: (a) forming a pad electrode on the semiconductor device; (b) coating the surface of the semiconductor device with an organic dielectric film so as to expose the center portion of the pad electrode; (c) treating the exposed surface of the pad electrode by dry etching; and (d) removing an altered layer produced in the organic dielectric film due to the dry etching for the surface treatment, using an oxygen-free dry process.

Description

BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] The present invention generally relates to a semiconductor device with bump electrodes (or protruding electrodes) and a fabrication method thereof, and more particularly, to removal of an altered layer generated in the surface area of an organic dielectric due a dry etching process for native oxide removal from a metal surface (such as a metal pad), in order to prevent surface leakage. [0003] 2. Description of the Related Art [0004] Providing protruding electrodes or bump electrodes on a semiconductor device, such as an IC chip, has become mainstream, which technique allows the chip to be mounted directly on a substrate. In recent years and continuing, the bump pitch becomes narrower and narrower along with the miniaturization of the semiconductor devices and the packages. [0005] A bump is formed on a pad electrode to provide electric connection with internal electrodes. In general, the surface of a semiconductor de...

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Benefits of technology

[0013] To overcome the above-described problem, it may be proposed to form a slit 109 in the polyimide layer 103 in advance in order to guarantee separation of the electrodes, as illustrated in FIG. 2. With this arrangement, even if the quality of the surface area of the polyimide layer 103 is altered, producing the altered layer 104 due to the dry etching for native oxide removal, leakage can be prevented owing to the existence of the slit 109.

[0015] Therefore, it is an object of the present invention to provide a technique for removing the altered layer on an organic dielectric efficiently, while preventing tarnish on the organic coating.

[0016] It is also an object of the present invention to provide a semiconductor device with reliable performance with reduced surface leakage.

[0029] By not using oxygen, oxidization of the conductor surface can be prevented during the removal of the altered layer.

[0031] Oxygen-free RF plasma etching allows the altered layer to be removed efficiently, while preventing surface degradation, such as tarnish, of the organic dielectric film during the removal of the altered layer.

Problems solved by technology

However, as the bump pitch becomes narrower, it becomes more difficult to guarantee a sufficient area for defining the slit 109.

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