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Method for growing high resistant GaN film

A thin-film, high-resistance technology, applied in the manufacture of electrical components, circuits, semiconductor/solid-state devices, etc., can solve problems such as system pollution and affect device performance, and achieve high surface flatness, simple and easy methods, and process compatibility. Effect

Inactive Publication Date: 2007-05-30
PEKING UNIV
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Problems solved by technology

[0009] At present, the main method for obtaining high-resistance GaN thin films by MOCVD technology is the p-type impurity compensation method. 10 Above); the disadvantage is that it will cause long-term pollution to the system, and the scattering effect of impurities will affect the performance of the device

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  • Method for growing high resistant GaN film

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Embodiment 1

[0019] Embodiment 1, growing GaN film

[0020] 1) Metal-organic chemical vapor deposition (MOCVD) equipment is used, the substrate is a sapphire substrate with (0001) surface, and H 2 , the reaction chamber pressure is 300torr, heated at 1100°C for 15min to clean the substrate;

[0021] 2) Cool down to about 550°C, feed trimethylgallium and ammonia gas, H 2 as a carrier gas. The reaction chamber pressure is 300torr, and the buffer layer is grown at a growth rate of 300nm per hour, with a thickness of 25nm;

[0022] 3) Stop feeding trimethylgallium, continue to feed ammonia gas, reduce the reaction chamber pressure to 75torr, 160torr, 250torr, 400torr (according to the data in Figure 2) in 60 seconds, and raise the temperature to 1070°C, keep 60 seconds;

[0023] 4) Introduce trimethylgallium, and epitaxially grow a GaN film at a growth rate of 2000 nm per hour at 1070° C., with a thickness of 2000 nm.

[0024] There are two types of dislocations in GaN films grown by MOCV...

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Abstract

This invention discloses one method to grow high resistance GaN film, which comprises stem following steps: in MOCVD device baking, forming nuclear, annealing and extending, wherein, the annealing pressure is less than 75 holders. This invention method can increase nuclear intensity through lowering annealing phase reaction chamber pressure to increase knife bit error to get self compensation high resistance GaN film.

Description

technical field [0001] The invention relates to a method for growing a high-resistance GaN thin film. Background technique [0002] As a typical representative of the third-generation wide-bandgap semiconductor materials, GaN-based nitride semiconductors not only have important applications in light-emitting diodes (LEDs), lasers (LDs), and ultraviolet detectors, but also in the development of high-temperature, high-frequency, and high-power microwaves. Electronics are also promising. Since there is a strong polarized electric field in the AlGaN / GaN heterojunction, a high-concentration two-dimensional electron gas will be generated at the interface and have a high electron mobility, so the GaN-based high-mobility transistor (HEMT) is It has great advantages in device application and has become a research and development hotspot at home and abroad. The structure diagram of GaN-based HEMT device material is shown in Fig. 1, and the dotted line in the figure represents the po...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/205H01L21/335
Inventor 沈波许谏许福军苗振林潘尧波杨志坚张国义
Owner PEKING UNIV
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