Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Flat active display with goniometric ballast structure and manufacturing technique thereof

A light-emitting display and ballast technology, which is applied in the field of microelectronics and nanotechnology, can solve problems such as no perfect solution, and achieve the effect of reducing electrical pressure

Inactive Publication Date: 2007-04-25
ZHONGYUAN ENGINEERING COLLEGE
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is no perfect solution to such problems

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Flat active display with goniometric ballast structure and manufacturing technique thereof
  • Flat active display with goniometric ballast structure and manufacturing technique thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0039] The present invention will be further described below in conjunction with accompanying drawing and embodiment, but the present invention is not limited to these

[0040] Example.

[0041] The present invention comprises a sealed vacuum chamber composed of a front glass panel 9, a rear glass panel 1 and surrounding glass frames 14, an anode electrode layer 10 arranged on the front glass panel 9 and a phosphor layer printed on the anode electrode layer 10 12. The control grid 7 for controlling electron emission, the insulating support wall structure 13 and the accessory getter 15 components are arranged on the rear glass panel 1 for adjusting the current direction of the carbon nanotube cathode and adjusting the carbon nanotube field emission The ability of the electronics to be laterally ballasted.

[0042] The lateral ballast structure includes a base material 1, a cathode electrode layer 2 disposed on the base material, a cathode resistance layer 3 disposed on the cat...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a plane lighting display with side ballast and relative production. Wherein, it comprises a sealing vacuum chamber formed by front glass panel, back glass panel and around glass frame; the anode electrode layer at the front glass panel and the fluorescent powder layer on the anode layer; the control grid for controlling the electron emission; the insulated support wall and auxiliary gettering element; the back glass panel is arranged with side ballast structure for adjusting the current direction of the cathode of carbon nanometer tube and adjusting the luminescent electron emission. And it has simple structure, low cost and high reliability.

Description

technical field [0001] The present invention belongs to the intercrossing fields of nanometer science and technology, microelectronic science and technology, flat panel display technology and vacuum science and technology, relates to the production of flat panel field emission light-emitting display devices, and specifically relates to the flat panel field emission display of carbon nanotube cathodes The content of device manufacturing, in particular, relates to a manufacturing process of a carbon nanotube cathode field emission flat display device with a lateral ballast structure. Background technique [0002] Carbon nanotubes are a high-performance material with a unique geometric shape, which has many characteristics such as large aspect ratio, small tip curvature radius, extremely high mechanical strength and good electrical properties. When an external voltage is applied to the surface of the carbon nanotube cathode, a strong electric field strength will be formed on th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01J29/02H01J29/04H01J31/12H01J9/00
Inventor 李玉魁
Owner ZHONGYUAN ENGINEERING COLLEGE
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products