Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing thickness controllable trilayer type diamond membrane

A technology of diamond thin film and thin film, which is applied in the direction of coating, metal material coating process, gaseous chemical plating, etc., to achieve the effect of large thickness

Inactive Publication Date: 2007-03-14
SHANGHAI UNIV
View PDF0 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a method for preparing a three-layer diamond film with controllable thickness, so as to solve the contradiction between the roughness and thickness of the diamond film

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing thickness controllable trilayer type diamond membrane
  • Method for preparing thickness controllable trilayer type diamond membrane

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] Process and steps in the present embodiment are as follows:

[0040] 1. Pretreatment of silicon wafer substrate: put a 10×10mm silicon wafer in HF solution for 5 minutes to remove the surface oxide layer of the silicon wafer, and then manually grind it with ultra-fine diamond powder with a particle size of 100nm for 15 minutes to make Very fine uniform scratches are formed on the surface, and finally the surface is cleaned repeatedly with acetone and deionized water respectively;

[0041] 2. Utilize the traditional and existing hot wire chemical vapor deposition experimental device for three-stage three-layer deposition of diamond film (see Figure 1):

[0042] (1) Deposition of the first layer of diamond film in the first stage: This is the deposition of the first layer of diamond film on the treated silicon wafer substrate placed on the sample stage, and it is also the crystal bottom layer of the entire three-layer film ;The silicon wafer substrate is placed 8mm away ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention is preparation process of three-layer diamond film in controllable thickness, belongs to the field of chemical vapor deposition technology of inorganic non-metal material, and aims at obtaining diameter film with proper roughness and thickness simultaneously. In an available chemical vapor deposition plant with hot filament and by means of regulating the carbon source concentration, depositing temperature, reaction pressure, applied bias and other parameters, three-layer diamond film is deposited on silicon chip. The present invention makes it possible to produce thick and flat diamond film without need of the post polishing treatment on the film.

Description

technical field [0001] The invention relates to a method for preparing a three-layer diamond film with controllable thickness, and belongs to the technical field of chemical vapor deposition of inorganic non-metallic materials. Background technique [0002] The research and development of chemical vapor deposition (CVD) diamond thin film technology has greatly broadened the application range of diamond, the most notable of which is the application in the manufacture of electronic devices and integrated circuits. In addition to having the highest hardness, diamond also has a large forbidden band (5.5eV), a large electron saturation velocity (2.5×10 7 cm / s), large surface acoustic wave propagation velocity (more than 10 4 m / s), high breakdown field strength (3.5×10 6 Vcm) and low dielectric constant (5.7), as well as the highest thermal conductivity (20W / cmK), its performance is far superior to that of silicon semiconductors that are currently widely used. Judging from the ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C16/27C23C16/02C23C16/50C23C16/52
Inventor 王林军夏义本赵平刘健敏苏青峰
Owner SHANGHAI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com