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Oxide-bonded silicon carbide material

A technology of silicon carbide and oxide, applied in lighting and heating equipment, furnace components, furnaces, etc., can solve the problems of insufficient creep resistance and thermal shock resistance, low strength, etc., to improve mass production and improve The effect of manufacturing large-scale products and reducing manufacturing costs

Active Publication Date: 2006-12-06
NGK INSULATORS LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, the above-mentioned oxide-bonded SiC refractories have lower strength than Si-impregnated SiC or recrystallized SiC refractories. Therefore, when used as products, not only thickness is required, but also creep resistance and thermal shock resistance are required. not enough

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～8、 comparative example 1～3

[0044] SiC and SiO 2 Prepared to have the composition shown in Table 1 after firing, and at the same time add the additives shown in Table 1 in terms of oxides as 1% by mass as trace components, and further add a dispersion material (substance name: ammonium polycarboxylate), viscose Mixture (substance name: polyacrylic acid emulsion) and water, and 50 kg of the obtained mixture were mixed by a ball mill for 24 hours to obtain slurries, respectively. After degassing the obtained slurry for 30 minutes in a vacuum, molded bodies were respectively obtained by casting the slurry into a plaster mold. The obtained molded body was fired at 1400° C. in an air atmosphere to obtain a sintered body (dimensions: 400 mm×400 mm×10 mm) as an oxide-bonded silicon carbide material. The characteristics of the obtained sintered body (bulk specific gravity, flexural strength at room temperature and 1300°C, oxidation resistance at 1300°C, creep resistance, and thermal shock resistance temperature...

Embodiment 9～21、 comparative example 4～28

[0055] SiC, SiO with particles shown in Table 2 2 and V 2 o 5 Prepared to have the composition shown in Table 2 after firing, and then added a dispersion material (name of substance: ammonium polycarboxylate), binder (name of substance: polyacrylic acid emulsion) and water, and mixed 50 kg of the obtained mixture with a ball mill After 24 hours, mud was obtained respectively. After degassing the obtained slurry for 30 minutes in a vacuum, molded bodies were respectively obtained by casting the slurry into a plaster mold. The obtained molded body was fired at 1400° C. in an air atmosphere to obtain a sintered body (dimensions: 400 mm×400 mm×10 mm) as an oxide-bonded silicon carbide material. The characteristics of the obtained sintered body (bulk specific gravity, flexural strength at room temperature and 1300°C, oxidation resistance at 1300°C, creep resistance, and thermal shock resistance temperature) were measured, and the results are shown in Table 2. middle. Here, Exa...

Embodiment 2、 comparative example 29

[0060] The microstructure of the oxide-bonded silicon carbide material (sintered body) obtained in Example 2 was observed with a SEM (scanning electron microscope). show the result in figure 1 middle. On the other hand, in Comparative Example 29, the microstructure of an oxide-bonded silicon carbide material (sintered body) commercially available under the trade name "Catalon" from Nippon Barbisa Co., Ltd. was observed with a SEM (scanning electron microscope). show the result in figure 2 middle.

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Abstract

There is disclosed an oxide-bonded silicon carbide material which has a more excellent strength as compared with a presently mainly available high-strength ceramic material (e.g., alumina, Si-impregnated SiC, or recrystallized SiC refractory material) and which improves mass productivity and facilitates the manufacturing of large-sized products, so that even products having complicated shapes can be easily prepared, and manufacturing costs can be largely reduced. The oxide-bonded silicon carbide material is substantially made of silicon carbide, has crystal particles of silicon carbide, grain boundaries and pores thereof, and has a structure in which the crystal particles of silicon carbide are bonded with an oxide containing silicon dioxide as a main component. A bending strength at ordinary temperature or a high temperature is 100 MPa or more, and a bulk specific gravity is 2.65 or more.

Description

technical field [0001] The present invention relates to oxide bonded silicon carbide materials. Background technique [0002] In the past, silicon carbide (SiC) refractory materials have occupied an important position in the industry due to their excellent heat resistance and fire resistance. , sleeves, installer pillars, beams or rollers, other kiln furniture, etc. As one of such SiC refractory materials, so-called oxide-bonded SiC refractory materials are known, that is, after kneading and molding SiC particles with trace amounts of metal oxides, etc., they are fired in an oxidizing atmosphere. The SiC particles are partially oxidized, and the silicon dioxide (SiO 2 ) to bind SiC particles. This oxide-bonded SiC sintered body is widely used as kiln furniture for firing ceramics because it is inexpensive (see Japanese Patent No. 3373312). [0003] However, oxide-bonded SiC refractories are inferior to Si-impregnated SiC or recrystallized SiC refractories in which SiC pa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/565C04B35/622F27D3/12
CPCC04B2235/9684C04B35/6263C04B2235/3239C04B2235/5445C04B2235/3281C04B2235/3201F27D3/026F27D1/0043C04B2235/3232C04B35/565C04B35/6316C04B2235/5472C04B2235/80C04B2235/77C04B2235/9607C04B2235/3279C04B2235/96C04B2235/3262C04B2235/3272C04B2235/3224C04B2235/3418F27D5/00C04B2235/6583C04B2235/3284C04B2235/3826C04B2235/6027C04B2235/3241C04B2235/5427F27D1/0006C04B2235/5436C04B2235/3275
Inventor 古宫山常夫山田寿树
Owner NGK INSULATORS LTD
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