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Plasma exciting method

A plasma and pulse excitation technology, applied in the fields of plasma, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as volume increase, uneven etching rate, asymmetry, etc., and achieve small difference in chemical reaction speed, The effect of reducing asymmetry and reducing damage

Active Publication Date: 2006-10-25
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The volume of the reaction chamber has also increased accordingly, and the asymmetry of the sides has become more and more serious. Therefore, most of the current etching equipment has the problem of uneven etching rate, which has caused great harm to the semiconductor manufacturing process. Adverse effects of

Method used

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  • Plasma exciting method

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Embodiment 1

[0020] In the plasma excitation method of this embodiment, the upper electrode is excited in pulse mode, and the lower electrode is excited by radio frequency to apply a bias voltage to the substrate to control the ion energy reaching the substrate.

[0021] During specific implementation, coils in the prior art may be used. The upper electrode is connected with a pulse power supply, and the lower electrode is connected with a 13.56MHz radio frequency power supply. This excitation method reduces the inhomogeneity of the particle density distribution caused by the asymmetry of the gas flow distribution. This excitation method greatly reduces electron impact ionization during the afterglow. The diffusion of charged particles and excited species during the post-glow smooths out the asymmetry created by the previous pulse, providing more uniform initial conditions for the next pulse. Therefore, the use of pulse excitation can reduce the asymmetry of the azimuth angle and improve...

Embodiment 2

[0023] In the plasma excitation method of this embodiment, the upper electrode is excited by high-frequency radio frequency, and the lower electrode is excited by low-frequency radio frequency to apply a bias voltage to the substrate to control the ion energy reaching the substrate.

[0024] During specific implementation, coils in the prior art may be used. The upper electrode is connected to a high-frequency radio frequency power supply, wherein the frequency range is 10-200MHz, specifically in the present embodiment, the frequency point used is 27MHz; the lower electrode is connected to a low-frequency radio frequency power supply, wherein the frequency range is 1-5MHz, specifically in In this embodiment, the frequency point used is 2MHz.

[0025] Using such an excitation method can reduce the asymmetry of the azimuth angle and improve the uniformity of the plasma, so that the difference in the chemical reaction speed on the wafer surface is small, the etching rate is unifo...

Embodiment 3

[0027] In the plasma excitation method of this embodiment, the upper electrode is excited by high-frequency radio frequency, and the lower electrode is excited by pulses to apply a bias voltage to the substrate to control the ion energy reaching the substrate.

[0028] During specific implementation, the flat electrode in the prior art can be used. The upper electrode is connected with a high-frequency radio frequency power supply, and the frequency used is 100MHz; the lower electrode is connected with a pulse power supply.

[0029] Using such an excitation method can reduce the asymmetry of the azimuth angle and improve the uniformity of the plasma, so that the difference in the chemical reaction speed on the wafer surface is small, the etching rate is uniform, and the quality of the etched wafer is improved.

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Abstract

The invention is related to method for energizing plasma. When energizing plasma, the method uses different electric signals to input to up and low electrodes respectively in order to energize plasma. Advantages are: reducing asymmetry of azimuth angle, improving evenness of plasma so as to reduce difference of chemical reaction speed occurred in surface of chip, reach even etching rate, reduce trouble of plasma. Thus, the invention raises quality of etched chip.

Description

technical field [0001] The invention relates to semiconductor etching technology, in particular to a new plasma excitation method capable of improving the uniformity of isosteroid distribution. Background technique [0002] At present, with the rapid development of electronic technology, people have higher and higher requirements for the integration of integrated circuits, which requires enterprises that produce integrated circuits to continuously improve the processing capacity of semiconductor wafers. Plasma devices are widely used in fabrication processes for fabricating integrated circuits (ICs) or MEMS devices. Among them, inductively coupled plasma (ICP) is widely used in etching and other processes. Under low pressure, the reactive gas is excited by radio frequency power to generate ionization to form a plasma. The plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules and free radicals. These active reactive groups and t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H05H1/46H01L21/00
Inventor 宋巧丽
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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