Process for preparing nitrigen-aluminium co-blended hole zinc oxide thin film material

Abstract

This invention relates to a NAL common doped cavity ZnO film and a preparing technology, which applies the supersonic spray pyrogenation method and takes the mixed solution of the organic or inorganic solution of Zn, the organic or inorganic solution of N and the inorganic solution of Al as the precursor to control the electric performance of type-P ZnO film by regulating and controlling the substrate temperature at 600-900deg.C, the movability can reach to 103cm at the maximum.

Description

technical field [0001] The invention relates to a preparation process of a nitrogen-aluminum co-doped hole-type zinc oxide film material used for zinc oxide-based light-emitting diodes (LEDs), laser diodes (LDs) and ultraviolet detectors and other optoelectronic devices, belonging to the field of semiconductor materials. Background technique [0002] The huge market potential of ZnO-based optoelectronic devices has stimulated a research boom of ZnO materials. The core of ZnO-based optoelectronic devices is the junction ZnO material, and the key issues in realizing p-n junction growth and developing ZnO homogeneous and ZnO-based heterojunction optoelectronic devices are to solve the self-compensation of ZnO and realize p-type doping efficiently and controllably. . The high-quality p-type ZnO thin film with low resistance and high mobility is of great significance for improving the luminous efficiency of light-emitting devices and the photoelectric conversion efficiency of de...

AI Technical Summary

Problems solved by technology

The active N source in the first type generally comes from N 2 , N 2 O or NH 3 , but when N replaces O atoms, the Madelung Energy is increased, which causes the localization of the N energy level, the N energy level is deep, and the doping effect is not very ideal.

The second and third types need to use higher-priced Ga and In sources, and the production cost is high.

[0004] At present, the preparation of p-type ZnO thin films mostly adopts magnetron sputtering and pulsed laser deposition (PLD) technology, but it is quite difficult to obtain p-type ZnO thin films with low resistance and high mobility.

For example, Ohshima et al. from Kumamoto University in Japan have used the N + or N 2 + Ion-sputtered Al mesh electrodes to perform N-Al co-doping on undoped ZnO thin films deposited by KrF excimer pulse laser (T. Ohshima et al., Thin Solid Films, 435, 49 (2003)), but the result Have not obtained p-type ZnO thin film; The p-type ZnO thin film obtained by N-Al co-doping (Ye Zhizhen et al., Journal of Crystal Growth 265,127 (2004)) to ZnO by DC reactive magnetron sputtering method, Its resistivity is 10 2 -10 4 Ωcm, the mobility is 0.3-19cm 2 V -1 the s -1 ; The higher level of p-type ZnO film developed by the above-mentioned Japanese Kawawa laboratory with the PLD method has a high resistivity and a low carrier mobility, which cannot meet the practical requirements

The reason is that these two methods require high vacuum conditions, so the resulting ZnO film has a high concentration of oxygen vacancies, which makes the self-compensation effect in the film significantly enhanced, and the concentration of N acceptors is very low, so it is necessary to make N provide It is very difficult to obtain enough hole carriers for p-type conduction in ZnO

In addition, magnetron sputtering and PLD equipment are expensive, the cost of film production is high, and it is difficult to achieve large-area deposition

Images