Semiconductor device and method of fabricating the same

Abstract

The present invention relates to a semiconductor device and a manufacturing method thereof. When a contact hole of a semiconductor layer and a source and drain electrode, a through-hole of a positive electrode and the source and drain electrode, a through-hole between connecting metal lines or a contact hole of the through-holes, are formed, at least one type of dry-process corrosion of high corrosion rate and high selectivity is used for dry-process corrosion; wet-process corrosion is adopted in the final corrosion treatment, so as to form the contact holes, the through-holes or the contact holes of the through-holes, which are provided with various conical angles and a plurality of contours; residues that are produced by corrosion can be completely eliminated in the wet-process and dry-process treatment; therefore, the contact holes, the through-holes or the contact holes of the through-holes have excellent contact characteristics. The semiconductor device comprises a substrate, a film transistor that is formed on the substrate and is provided with a semiconductor layer, a grid insulation layer, a grid electrode and a interlayer dielectric, and contact holes that penetrates the grid insulation layer and the interlayer dielectric, is exposed on the surface of the semiconductor layer and is provided with a plurality of contours. The upper part of the contact holes is provided with a contour for the wet-process corrosion; and the lower part has at least one of the contours for the wet-process corrosion and the dry-process corrosion.

Description

technical field [0001] The present invention relates to a semiconductor device and a manufacturing method thereof, more particularly, to a semiconductor device and a manufacturing method thereof, the manufacturing method comprising: when forming a semiconductor layer and contact holes for source and drain electrodes, a When using at least one of high etch rate dry etch and high selectivity dry etch during via holes, via holes between metal interconnect lines, or via contact holes, and in the final etch process Wet etching is carried out in the process, so that the contact hole, via hole or through-hole contact hole can be formed into various profiles with different cone angles, and the corrosion residue due to etching can be completely removed when wet-dry processing is performed , so that the contact hole, the through hole and the through hole contact hole can have excellent contact performance. Background technique [0002] Generally, silicon thin film transistors (TFTs) ...

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Problems solved by technology

[0008] However, in the above method of forming a contact hole, as figure 2 As shown, dry etching will form a polymer 21 under the contact hole 18, the contact hole 18 has penetrated the interlayer dielectric 17 and the gate insulating layer 14 and exposed the surface of the semiconductor layer 13, so that a specific polymer is required. Remove the solution to remove the polymer, resulting in an increase in the process of removing the polymer, and the surface of the semiconductor layer will be damaged due to over-etching 22, resulting in uneven contact resistance

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