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Zn1-x CoxO rare magnetic semiconductor film and its preparation technology

A dilute magnetic semiconductor, zn1-xcoxo technology, applied in semiconductor/solid-state device manufacturing, electromagnetic device manufacturing/processing, electrical components, etc., can solve the problems of difficult precise control of process parameters, poor repeatability, complex process, etc., to achieve The effect of good visible light transmittance

Inactive Publication Date: 2006-01-25
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

On the whole, the process of preparing DMS materials by the above method is complicated, and it is necessary to implement co-doping of several impurity elements, and it is not easy to achieve precise control of process parameters, so the success rate is low (that is, the repeatability of obtaining DMS materials is poor) , the quality of the product is unsatisfactory, and its Curie temperature is generally low

Method used

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  • Zn1-x CoxO rare magnetic semiconductor film and its preparation technology
  • Zn1-x CoxO rare magnetic semiconductor film and its preparation technology

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] 1. According to the ratio of Co powder (purity is analytically pure): ZnO powder (purity is 99.99%) = 2:98 (mass percentage), weigh 1 gram of Co powder and 49 grams of ZnO powder, and mix them uniformly by fully grinding , and then press it into a billet, and finally in O 2 atmosphere and 600 ° C high temperature environment for 10 hours, a (ZnO) 0.98 co 0.02 ceramic target.

[0025] 2. Clean the polished single crystal Si substrate with N 2 After drying, quickly put them into the sample holder in the growth chamber.

[0026] 3. The pressed and sintered (ZnO) at 600°C 0.98 co 0.02 The ceramic target material is placed in the crucible, and the target source and the substrate are separated by a baffle.

[0027] 4. Use a vacuum pump to pump the background pressure of the reaction chamber to ≤3×10 -3 Pa. The substrate is heated.

[0028] 5. After the substrate is heated to 250°C, use a high-energy electron beam with an acceleration voltage of 6KV to heat (ZnO) 0.9...

Embodiment 2

[0034] 1. Press CO 3 o 4 Powder (purity is analytically pure): the ratio of ZnO powder (purity is 99.99%)=5:95 (mass percentage), weigh 2.5 grams of Co 3 o 4 powder and 47.5 grams of ZnO powder, which were uniformly mixed by grinding them well, and then pressed into billets, and finally in O 2 atmosphere and 500 ° C high temperature environment for 10 hours, a (ZnO) 0.95 (Co 3 o 4 ) 0.05 ceramic target.

[0035] 2. Clean the polished single crystal Si substrate with N 2 After drying, quickly put them into the sample holder in the growth chamber.

[0036] 3. The pressed and sintered (ZnO) at a high temperature of 500°C 0.95 (Co 3 o 4 ) 0.05 The ceramic target material is placed in the crucible, and the target source and the substrate are separated by a baffle.

[0037] 4. Use a vacuum pump to pump the background pressure of the reaction chamber to ≤3×10 -3 Pa. The substrate is heated.

[0038] 5. After the substrate is heated to 200°C, use a high-energy electron...

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Abstract

This invention relates to a semiconductor film material preparation technology of zn1-xCoXo with the ferromagnetic property (namely Zno doped with Co, x is the orthonormal atomic number ratio of Co atoms and Zn atoms, which applies a commercial electronic beam reaction vapor system and uses multi-crystal Zno powder and Co, Co2o3 or Co3O4 powder as the material to be grown on the surface of the substrate directly. Apart from the main doped element Co, it does not need any other sub- doped elements, besides, its Curie temperature is higher then the room one, the preparation technology is rather simple.

Description

technical field [0001] The invention belongs to the technical field of semiconductor optoelectronics, magnetoelectronic materials and devices, and specifically relates to a Zn 1-x co x O [that is, Co-doped ZnO, where x is the normalized atomic number ratio of Co atoms and Zn atoms, 0 < x ≤ 0.5] semiconductor thin film materials and their use of electron beam reaction evaporation equipment, vapor phase epitaxy on the substrate surface The technique used to grow the thin film. technical background [0002] Diluted Magnetic Semiconductor (DMS) materials are doped in non-magnetic semiconductors (such as PbSe of IV-VI group, ZnSe, ZnTe, ZnO of II-VI group or InAs, GaAs, GaN of III-V group, etc.) Doping 3d transition metal (such as Fe, Co, Ni, Mn, V, Cr, etc.) ions, using carrier control technology to generate new magnetic functional materials. The realization of DMS material essentially utilizes the feature that the 3d electron orbitals of transition metals are not fully oc...

Claims

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Application Information

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IPC IPC(8): H01L21/20H01L43/12C23C14/30
Inventor 邱东江余萍顾智企
Owner ZHEJIANG UNIV
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