Parallel array-type small refrigerator and production thereof

Abstract

A parallel array-type small refrigerator and a production thereof are provided. The refrigerator is a technic for enhancing temperature control on a laser device and a computer CPU, improving heat sink in a chip, thereby increasing a work efficiency of the chip, prolonging a life time, a layer structure and position array of the refrigerator are: a silicon substrate (6) of P-type semiconductors, a buffer layer (7) of the P-type semiconductors, a first adulteration layer (8) of the P-type semiconductors, a superlattice layer (9) of the P-type semiconductors, a second adulteration layer (10) of the P-type semiconductors, a light adulteration layer (11) of the P-type semiconductors, and a metal layer (13) in order; a silicon dioxide isolation layer (12) is positioned between the P-type semiconductors and between the metal layer and the first adulteration layer of the P-type semiconductors. A production process uses an oxide isolation process to form the parallel array-type small refrigerator, thus, a yield of device manufacturing is increased, and a contact area is reduced at the same time, thereby an interface contact resistance is largely reduced, refrigeration efficiency is largely increased.

Description

technical field [0001] The invention is a technology for improving the temperature control of laser devices and computer CPUs, improving the heat dissipation inside the chip, thereby improving the working efficiency of the device chip and prolonging the service life, belonging to the field of advanced manufacturing and automation technology. Background technique [0002] Currently, thermoelectric materials can form solid-state coolers and power generators. Solid-state thermoelectric generators and refrigerators use the Peltier effect of electrons to take away excess heat, and they mainly face the problem of thermoelectric conversion efficiency. The performance index of thermoelectric cooling devices is generally described by the quality coefficient ZT, and its mathematical expression is: ZT=S 2 σT / k, where T is the absolute temperature, S is the Seebeck coefficient of the material, σ is the electrical conductivity, and k is the thermal conductivi...

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Problems solved by technology

However, this process requires strict control of the thickness of the thermoelectric unit. During the bonding process of each substrate, if the thickness of the unit is different, the device will be separated and an open circuit will be formed. Secondly, the precise positioning of the position of the thermoelectric unit and the metal electrode is also required. to reduce contact resistance

On the other hand, since the materials used are V and VI compound thin films, the thermoelectric quality index ZT of the system cannot break through the limit of bulk materials, thus limiting the working efficiency of the device.

For multi-stage series structure micro-refrigerators, when one of the units is disconnected, the remaining units will lose the ability to continue to work, and for the series structure of multi-stage P, N-type thermoelectric units, the surface contact resistance is relatively large

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