Method for online test of wafer metal interconnection line reliability

Abstract

This invention provides a transistor metal connection wire reliability on line test method, which comprises the following steps: using the transistor cutting channel test circuit and exerting test voltage on any point of the test circuit comb circuit; testing the leakage current between the connection wires of the comb circuit; step by step increasing the test voltage, if the leakage current tested is small and the voltage is basically stable, which means the metal transistor connection wire electric characteristic has good reliability, otherwise, there is some problems existing.

Description

technical field [0001] The invention relates to a method for detecting electrical characteristics of a chip, in particular to an on-line test of the reliability of a metal interconnection wire of a chip. Background technique [0002] With the shrinking of the size of integrated circuits and the increase in the area of ​​silicon wafers, the integrated circuit industry has stepped into the scope of 0.13mm line width technology, and the circuit complexity or integration of integrated circuits has increased, requiring multiple layers of polysilicon layers; On the one hand, the line width of the metal line cannot be reduced according to the reduction ratio of the MOS device, so the previous design of a single metal layer can no longer complete the wiring work of the entire integrated circuit, and must use 2 layers, 3 layers or more. Layers of metal interconnect lines to meet the requirements of circuit design. When there is a need for the above multi-layer polysilicon and multi-...

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Problems solved by technology

[0005] However, the above-mentioned detection is only used to detect whether there is a short circuit between the connecting wires online, and cannot detect the reliability of the insulating dielectric material layer online.

Because the existing time-dependent insulating dielectric material layer breakdown voltage (TDDB) and other electrical acceptance tests can only be randomly sampled during the wafer production process, and such testing usually takes several days, the testing process is complicated, especially This kind of detection is carried out offline, which is for mass production. When it is confirmed that a certain wafer has a time-dependent insulating dielectric material layer breakdown voltage (TDDB) problem, the same batch of wafers may have been processed, which affects IC process yield

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