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Tin-doped indium oxide film and making process of fine pattern

A micro-pattern, tin-doped technology, applied in metal material coating process, solid-state chemical plating, semiconductor/solid-state device manufacturing, etc.

Inactive Publication Date: 2005-03-23
XIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method is cumbersome and requires the use of corrosive chemicals during the etching process, which pollutes the environment.
On the other hand, since the ITO film contains two elements of indium and tin, when the size of the micro-pattern is small (such as submicron level), the different corrosion rates of the chemical etchant to the two elements will appear, making the lines of the micro-pattern rough and difficult to To meet the needs of sub-micron ITO thin film fine pattern technology

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] Indium nitrate ln(NO 3 ) 3 4.5H 2 O and tin tetrachloride Sncl 4 ·5H 2 O is raw material, benzoylacetone BzAcH is chelating agent;

[0015] First, using acetylacetone AcAc as solvent, indium nitrate ln(NO 3 ) 3 4.5H 2 O and tin tetrachloride Sncl 4 ·5H 2 O adds in acetylacetone AcAc solvent, then adds deionized water, each component molar ratio is: ln(NO 3 ) 3 4.5H 2 O: Sncl 4 ·5H 2 O:AcAc:H 2 O=1:0.05:6:0.1, stirred with a magnetic stirrer at 25°C for 2 hours to prepare solution A.

[0016] Then prepare solution B, then use ethylene glycol methyl ether MOE as solvent, benzoylacetone BzAcH as chelating agent and add in ethylene glycol methyl ether MOE solvent, the molar ratio of each component BzAcH:MOE=1:50, at room temperature 18 ℃ Dissolve under the temperature to prepare solution B. Mix solutions A and B to prepare solution C. In solution C, ln(NO 3 ) 3 4.5H 2 The molar ratio of O and BzAcH derived from B was 1:1, and stirred with a magnetic stirr...

Embodiment 2

[0018] Indium nitrate ln(NO 3 ) 3 4.5H 2 O and tin tetrachloride Sncl 4 ·5H 2 O is raw material, benzoylacetone BzAcH is chelating agent;

[0019] Using acetylacetone AcAc as solvent, indium nitrate ln(NO 3 ) 3 4.5H 2 O and tin tetrachloride Sncl 4 ·5H 2 O is added in acetylacetone AcAc solvent, then adds deionized water, each component ratio is (molar ratio) ln(NO 3 ) 3 4.5H 2 O: Sncl 4 ·5H 2 O:AcAc:H 2 O=1:0.1:8:0.15, stirred with a magnetic stirrer at 18°C ​​for 1 hour to prepare solution A.

[0020] Then prepare solution B, then use ethylene glycol methyl ether MOE as solvent, phenylacetone BzAcH as chelating agent and add in ethylene glycol methyl ether MOE solvent, the molar ratio of each component BzAcH:MOE=1:40, at room temperature 25 ℃ Next, solution B was prepared. Mix solutions A and B to configure solution C. In solution C, ln(NO 3 ) 3 4.5H 2 The molar ratio of O and BzAcH derived from B was 1:0.8, and stirred with a magnetic stirrer for 2 hours ...

Embodiment 3

[0022] Indium nitrate ln(NO 3 ) 3 4.5H 2 O and tin tetrachloride Sncl 4 ·5H 2 O is raw material, benzoylacetone BzAcH is chelating agent;

[0023] Using acetylacetone AcAc as solvent, indium nitrate ln(NO 3 ) 3 4.5H 2 O and tin tetrachloride Sncl 4 ·5H 2 O is added in acetylacetone AcAc solvent, then adds deionized water, and the molar ratio of each component is ln(NO 3 )3·4.5H 2 O: Sncl 4 ·5H 2 O:AcAc:H 2O=1:0.12:7:0.8, stirred with a magnetic stirrer at 30°C for 1.5 hours to prepare solution A.

[0024] Then prepare solution B, then use ethylene glycol methyl ether MOE as solvent, benzoylacetone BzAcH is added in ethylene glycol methyl ether MOE solvent as chelating agent, the molar ratio of each component is BzAcH: MOE=1: 45, at normal temperature 20 solution at ℃ to prepare solution B. Mix solutions A and B to prepare solution C. In solution C, ln(NO 3 ) 3 4.5H 2 The molar ratio of O and BzAcH derived from B was 1:1.2, and stirred with a magnetic stirrer ...

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PUM

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Abstract

The invention discloses the indium oxide film adulterating with tin and the preparation technique of minute figures. The indium nitrate and the tin tetrachloride are put into the acetylacetone solrent, add the deionized water to it and get the solution A; add the chelating agent of benzoyl acetone into the ethylene glycol monomethyl ether solvent and get the solution B; mix the solution A with the solution B, whisk it, aggradate it and get the indium oxide sol adulterated with light sensitive tin. The high pressure mercury lamp or ultraviolet laser pass through the masking with minute figures, irradiate the indium oxide sol adulterated with light sensitive tin, irradiate it with ultraviolet light in the air environment, get rid of its masking, put it in the absolute ethyl alcohol, dissolve the part that is not irradiated by the ultraviolet light, keep the part irradiated, heat it to get rid of the organic material and get the minute figure of the indium oxide film adulterated with tin. The invention does not need special vacuum, reaction chamber, photoresist and corrosive medium, can produce great areal minute figure and can get the high class minute figures of the ITO film.

Description

technical field [0001] The invention relates to the fields of optoelectronics and microelectronics, in particular to a method for preparing a transparent conductive film and a fine pattern. Background technique [0002] Tin-doped indium oxide film is usually called ITO (Indum-tin-oxide) film, which is a transparent and conductive semiconductor film, widely used in liquid crystal, plasma and other flat panel displays and transparent electrodes of solar cells. At present, conventional methods for preparing ITO thin films include chemical vapor deposition, magnetron sputtering, thermal spraying, and sol-gel methods. However, ITO thin films used in the field of microelectronics are usually required to be made into specific fine patterns. At present, the micro-pattern preparation of ITO thin film adopts ion etching or traditional photolithography process after film formation. The common feature of the two is that the film making and the micro pattern preparation are carried out...

Claims

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Application Information

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IPC IPC(8): C23C20/08H01L21/00H01L23/48
Inventor 赵高扬李颖张卫华韩晶陈源清
Owner XIAN UNIV OF TECH
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