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Dielectric ceramic material for piece type capacitor and preparing method thereof

A technology for dielectric ceramics and capacitors, applied in the field of chip capacitors, can solve the problems of difficulty in obtaining fine crystals, insulation resistance and dielectric coefficient temperature characteristics have a great influence on grain size, low dielectric coefficient, etc. The effect of flat temperature characteristics and reduced production cost

Inactive Publication Date: 2005-03-16
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Prior art, such as U.S. Patent US006243254B1, US006245433B1, US006205015B1 etc., the dielectric coefficient of the dielectric ceramic material for X7R characteristic chip capacitors made by the technology disclosed is low (less than 2000), while the technology disclosed in Japanese Patent JP-A-63-103861 The insulation resistance and dielectric coefficient temperature characteristics of the manufactured X7R characteristic dielectric materials are greatly affected by the grain size of the material, and it is difficult to obtain a fine-grained dielectric material whose dielectric coefficient temperature characteristics meet the requirements of the above standards.

Method used

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  • Dielectric ceramic material for piece type capacitor and preparing method thereof
  • Dielectric ceramic material for piece type capacitor and preparing method thereof
  • Dielectric ceramic material for piece type capacitor and preparing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0054] Principal component expression Ba m (Ti 1-x Zr x )O 3 Among them, m=1.01, x=0.015; the first auxiliary component selects Mg(NO 3 ) 2 ·6H 2 O, based on the main component as 100mol%, Mg(NO 3 ) 2 ·6H 2 The amount of O added was 1.0 mol%.

[0055] BaTiO produced by the oxalic acid method 3 and analytically pure feedstock: BaCO 3 , ZrO 2 , Mg(NO 3 ) 2 ·6H 2 O According to the above chemical composition ratio, add pure water, mix ball mill evenly, dry it by spray drying method, put it in resistance furnace and calcined under air atmosphere, the calcining temperature is 1200°C, keep it warm for 2 hours, add water after cooling, place it in high-speed ball mill for 5 hours ball milling , to obtain the main material after drying.

[0056] Production of the third sub-component: BaCO 3 , CaCO 3 , B 2 o 3 , SiO 2 The molar ratio is: 1.0:0.5:1.5:1.0, weighed and mixed, placed in a crucible, heated to 1350°C and melted, then made into glass cullet by water coolin...

Embodiment 2

[0072] The glassy material (the 3rd subcomponent in the material composition) of four kinds of chemical composition is made with the same process of embodiment 1, and its chemical composition mol ratio is respectively:

[0073] Glassy material A: BaCO 3 : CaCO 3 :B 2 o 3 : SiO 2 =1.0:0.5:1.5:1.0

[0074] Glassy material B: BaCO 3 : CaCO 3 :B 2 o 3 : SiO 2 =1.0:1.0:2.0:1.0

[0075] Glassy material C: BaCO 3 : CaCO 3 :B 2 o 3 : SiO 2 =1.0:0.1:1.0:0.5

[0076] Glassy material D: BaCO 3 : CaCO 3 :B 2 o 3 : SiO 2 =1.0:0.5:1.5:1.5

[0077] Principal component expression Ba m (Ti 1-x Zr x )O 3 In, let m=1.01, x=0.015

[0078] Magnesium nitrate [Mg(NO 3 ) 2 ·6H 2O], its addition amount is 1.0mol%.

[0079] MnO as one of the second subcomponents 2 MnCO 3 The form is added, the addition amount is 0.12mol%, as one of the second subcomponents Re 2 o 3 Choose Y 2 o 3 and Dy 2 o 3 0.4 mol% of each was added.

[0080] BaTiO produced by the oxalic acid m...

Embodiment 3

[0086] The glassy material A (the third subcomponent in the material composition) was produced by the same process as in Example 2, and the addition amount was: 1.5wt%.

[0087] MnO as one of the second subcomponents 2 MnCO 3 The form is added, the addition amount is 0.15mol%, as one of the second subcomponents Re 2 o 3 Choose Y 2 o 3 and Dy 2 o 3 0.4 mol% of each was added.

[0088] The material numbered 113 is BaTiO produced by hydrothermal method. 3 Raw materials, whose powder particle size is less than 200nm when observed under a scanning electron microscope.

[0089] As the first subcomponent, number 113 selects MgO for use, and the consumption is 1.0mol%, and other number materials select magnesium nitrate [Mg(NO 3 ) 2 ·6H 2 O], the dosage is listed in Table 5.

[0090] BaTiO 3 and analytically pure BaCO 3 , ZrO 2 , the first auxiliary component is according to the chemical composition ratio listed in Table 5, plus pure water, mixed ball mill evenly, dried...

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Abstract

The invention discloses a dielectric ceramic material for piece type capacitor and preparing method, which comprises the steps of, (1) mixing each of third accessory constituents, heating till molten, using water-cooled quenching method to obtain glass, disintegrating by ball grinding to obtain glass state material, (2) mixing the main constituent and the first accessory constituent, watering, ball grinding or mixing uniformly to obtain slip, drying the slip into powder material, (3) subjecting the powder material obtained through drying in step (2) to calcinations in the air at 1100-1250 deg. C, thermal insulating 0.5-5 hours, watering, ball grinding till the grain size in the particles D50<=0.7 um, drying to obtain the main ingredient, (4) mixing the main ingredient, the second accessory constituent and the glass state material obtained in step (1) uniformly.

Description

technical field [0001] The invention relates to chip capacitor technology, in particular to a dielectric ceramic material for chip capacitors which can be co-sintered with base metal inner electrode materials in a reducing atmosphere, and whose dielectric coefficient temperature characteristics meet the X7R characteristic requirements stipulated in EIA standards. [0002] The invention also relates to a preparation method of the dielectric ceramic material. Background technique [0003] In order to meet the requirements of miniaturization, the number of dielectric and internal electrode layers of chip ceramic capacitors continues to increase, and the cost of internal electrodes continues to increase. Using base metals nickel (Ni) and copper (Cu) instead of expensive palladium-silver (Pd-Ag) as electrode materials can greatly reduce the manufacturing cost of chip capacitors. [0004] Because metal nickel or copper is easy to oxidize at high temper...

Claims

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Application Information

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IPC IPC(8): C04B35/462C04B35/48C04B35/622H01B3/12H01G4/12
Inventor 卢振亚陈志武
Owner SOUTH CHINA UNIV OF TECH
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