Semiconductor device and manufacturing method

Abstract

The object of the present invention is to provide a semiconductor device comprising an n-type channel field effect transistor and a p-type channel field effect transistor, which has a high degree of reliability and excellent drain current characteristics. The gist of the invention for attaining the object resides in disposing a silicon nitride film to the side wall of a trench for an active region in which the n-type channel field effect transistor is formed and disposing the silicon nitride film only in the direction perpendicular to the channel direction to the sidewall of the trench for the active region of the p-type channel field effect transistor. According to the present invention, a semiconductor device comprising an n-type channel field effect transistor and a p-type channel field effect transistor of excellent current characteristics can be provided.

Description

technical field [0001] The invention relates to a semiconductor device, especially a semiconductor device with an n-channel field effect transistor and a p-channel field effect transistor. Background technique [0002] In recent years, with the development of information communication devices, the processing capability of semiconductor devices such as large scale integration (LSI) has become increasingly strict, and the operation speed of transistors has been increased. In particular, complementary field effect transistors composed of n-channel field effect transistors and p-channel field effect transistors are widely used because of their low power consumption, but their high-speed development is mainly due to the miniaturization of the structure. Supported by advances in photolithography for processing semiconductor components. However, the minimum processing size (minimum processing size of the gate electrode) required recently has become below the wavelength level of li...

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Problems solved by technology

[0004] However, as described above, if materials with different crystal lattice constants are epitaxially grown to match their lattices, the deformation energy generated in the crystal is large, and when the film thickness is equal to or greater than a certain critical film thickness, there may be a The problem of dislocations in crystallization, in the manufacturing process of semiconductor devices such as LSI, introduces new manufacturing equipment along with the introduction of silicon germanium materials that are generally not available, which increases the cost, so the above method has not been practical.

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